-
公开(公告)号:US11670836B2
公开(公告)日:2023-06-06
申请号:US17084487
申请日:2020-10-29
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ting Ruei Chen , Hung-Hsiang Cheng , Guo-Cheng Liao , Yun-Hsiang Tien
IPC: H01Q1/22 , H01Q1/36 , H01L23/66 , H01L23/538 , H01Q19/10
CPC classification number: H01Q1/2283 , H01L23/5385 , H01L23/66 , H01Q1/36 , H01Q19/104 , H01L2924/1421
Abstract: A semiconductor device package includes a substrate, an air cavity, a radiator, and a director. The substrate has a top surface. The air cavity is disposed within the substrate. The air cavity has a first sidewall and a second sidewall opposite to the first sidewall. The radiator is disposed adjacent to the first sidewall of the air cavity. The director is disposed adjacent to the second sidewall of the air cavity.