公开(公告)号：US20220415950A1

公开(公告)日：2022-12-29

申请号：US17739971

申请日：2022-05-09

申请人： Aeluma, Inc.

发明人： Jonathan KLAMKIN

IPC分类号： H01L27/146 ,  H01L31/105 ,  H01L31/107 ,  G01S7/481 ,  G01S17/89

摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20240162270A1

公开(公告)日：2024-05-16

申请号：US18409639

申请日：2024-01-10

申请人： Aeluma, Inc.

发明人： Jonathan KLAMKIN

IPC分类号： H01L27/146 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/109

摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20230121546A1

公开(公告)日：2023-04-20

申请号：US18052097

申请日：2022-11-02

申请人： Aeluma, Inc.

发明人： Jonathan KLAMKIN

IPC分类号： H01L27/146 ,  G01S7/481

摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20240162255A1

公开(公告)日：2024-05-16

申请号：US18408811

申请日：2024-01-10

申请人： Aeluma, Inc.

发明人： Jonathan KLAMKIN

IPC分类号： H01L27/146 ,  G01S7/481

CPC分类号： H01L27/1461 ,  G01S7/4813 ,  G01S7/4816 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14694 ,  H01L31/03042

摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20220415934A1

公开(公告)日：2022-12-29

申请号：US17842554

申请日：2022-06-16

申请人： Aeluma, Inc.

发明人： Jonathan KLAMKIN

IPC分类号： H01L27/144 ,  G01S7/481 ,  G01S17/894 ,  H01L27/146

摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).