公开(公告)号：US11881498B2

公开(公告)日：2024-01-23

申请号：US17356208

申请日：2021-06-23

Applicant: Aeluma, Inc.

Inventor： Jonathan Klamkin

IPC: H01L27/146 ,  H01L31/109 ,  H01L31/0352 ,  H01L31/0304

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/109

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20220413156A1

公开(公告)日：2022-12-29

申请号：US17356261

申请日：2021-06-23

Applicant: Aeluma, Inc.

Inventor： Jonathan Klamkin

IPC: G01S17/931 ,  G01S17/933 ,  G01S7/48 ,  H01S5/183

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US11881490B2

公开(公告)日：2024-01-23

申请号：US18052097

申请日：2022-11-02

Applicant: Aeluma, Inc.

Inventor： Jonathan Klamkin

IPC: H01L27/146 ,  G01S7/481 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/107

CPC classification number: H01L27/1461 ,  G01S7/4813 ,  G01S7/4816 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14694 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/1075

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20220415950A1

公开(公告)日：2022-12-29

申请号：US17739971

申请日：2022-05-09

Applicant: Aeluma, Inc.

Inventor： Jonathan KLAMKIN

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/107 ,  G01S7/481 ,  G01S17/89

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20240162270A1

公开(公告)日：2024-05-16

申请号：US18409639

申请日：2024-01-10

Applicant: Aeluma, Inc.

Inventor： Jonathan KLAMKIN

IPC: H01L27/146 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/109

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20230121546A1

公开(公告)日：2023-04-20

申请号：US18052097

申请日：2022-11-02

Applicant: Aeluma, Inc.

Inventor： Jonathan KLAMKIN

IPC: H01L27/146 ,  G01S7/481

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20230010538A1

公开(公告)日：2023-01-12

申请号：US17356282

申请日：2021-06-23

Applicant: Aeluma, Inc.

Inventor： Jonathan Klamkin

IPC: H01L27/146 ,  G01S7/481

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US12107108B2

公开(公告)日：2024-10-01

申请号：US17739971

申请日：2022-05-09

Applicant: Aeluma, Inc.

Inventor： Jonathan Klamkin

IPC: H01L27/146 ,  G01S7/481 ,  G01S7/4863 ,  G01S17/42 ,  G01S17/88 ,  G01S17/89 ,  H01L23/00 ,  H01L31/0304 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L27/14632 ,  G01S7/4814 ,  G01S7/4816 ,  G01S7/4863 ,  G01S17/42 ,  G01S17/88 ,  G01S17/89 ,  H01L27/14694 ,  H01L31/0304 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1075 ,  G01S7/4815 ,  H01L24/08 ,  H01L27/14607 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14687 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/02162 ,  H01L31/02327 ,  H01L2224/08145

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20240162255A1

公开(公告)日：2024-05-16

申请号：US18408811

申请日：2024-01-10

Applicant: Aeluma, Inc.

Inventor： Jonathan KLAMKIN

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/1461 ,  G01S7/4813 ,  G01S7/4816 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14694 ,  H01L31/03042

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

公开(公告)号：US20220415955A1

公开(公告)日：2022-12-29

申请号：US17356208

申请日：2021-06-23

Applicant: Aeluma, Inc.

Inventor： Jonathan Klamkin

IPC: H01L27/146 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/0352

Abstract: Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).