公开(公告)号：US20170178929A1

公开(公告)日：2017-06-22

申请号：US15321701

申请日：2015-07-09

Applicant: Agency for Science, Technology and Research

Inventor： Vivek CHIDAMBARAM ,  Sunil WICKRAMANAYAKA ,  Jinghui XU ,  Zhipeng DING ,  Li Yan SIOW

IPC: H01L21/50 ,  H01L23/488 ,  B23K35/00

CPC classification number: H01L21/50 ,  B23K35/00 ,  B23K35/002 ,  H01L23/488 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.

公开(公告)号：US20190031502A1

公开(公告)日：2019-01-31

申请号：US16071899

申请日：2017-01-26

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Vivek CHIDAMBARAM ,  Li Yan SIOW ,  Qing Xin ZHANG ,  Sunil WICKRAMANAYAKA

IPC: B81C1/00

Abstract: There is provided a method of bonding a first substrate and a second substrate, the method comprising: providing an aluminium (Al) connection having a first width on one side of a first substrate; providing a germanium (Ge) connection having a second width on one side of a second substrate, wherein the second width is larger than the first width; and bonding the Al connection on the first substrate and the Ge connection on the second substrate by eutectic bonding of at least a portion of the Al connection and at least a portion of the Ge connection to form an Al—Ge eutectic melt, wherein the Al—Ge eutectic melt is confined within the second width of the Ge connection.