公开(公告)号：US10134607B2

公开(公告)日：2018-11-20

申请号：US15321701

申请日：2015-07-09

Applicant: Agency for Science, Technology and Research

Inventor： Vivek Chidambaram ,  Sunil Wickramanayaka ,  Jinghui Xu ,  Zhipeng Ding ,  Li Yan Siow

IPC: B23K20/02 ,  B81C3/00 ,  C25D3/48 ,  H01L23/48 ,  H05K1/11 ,  H01L23/373 ,  H01L23/15 ,  H01L21/58 ,  H01L21/50 ,  B23K35/00 ,  H01L23/488

Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.