公开(公告)号：US20130148418A1

公开(公告)日：2013-06-13

申请号：US13708866

申请日：2012-12-07

Applicant: Agency for Science, Technology and Research

Inventor： Yuanhong LUO ,  Gerard Franck Ernult

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive device including a fixed magnetic layer structure, a first free magnetic layer structure, and a second free magnetic layer structure, wherein the fixed magnetic layer structure is arranged in between the first free magnetic layer structure and the second free magnetic layer structure, wherein the magnetization orientation of the first free magnetic layer structure is variable in response to a first electrical signal of a first polarity and the magnetization orientation of the second free magnetic layer structure is at least substantially non-variable in response to the first electrical signal, and wherein the magnetization orientation of the second free magnetic layer structure is variable in response to a second electrical signal of a second polarity and the magnetization orientation of the first free magnetic layer structure is at least substantially non-variable in response to the second electrical signal, wherein the second polarity is opposite to the first polarity.

Abstract translation: 一种包括固定磁性层结构，第一自由磁性层结构和第二自由磁性层结构的磁阻器件，其中固定磁性层结构布置在第一自由磁性层结构和第二自由磁性层结构之间，其中 第一自由磁性层结构的磁化取向响应于第一极性的第一电信号是可变的，并且第二自由磁性层结构的磁化方向响应于第一电信号至少基本上不可变;以及 其中所述第二自由磁性层结构的磁化取向响应于第二极性的第二电信号是可变的，并且所述第一自由磁性层结构的磁化取向响应于所述第二电信号至少基本上不可变， 其中所述第二极性与所述第一极性相反 性。

公开(公告)号：US20150371697A1

公开(公告)日：2015-12-24

申请号：US14838254

申请日：2015-08-27

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Yuanhong LUO ,  Rachid SBIAA ,  Yan Hwee Sunny LUA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

Abstract translation: 根据本发明的实施例，提供了一种磁阻器件。 磁阻器件包括至少两个铁磁软层，其中至少两个铁磁软层具有不同的磁化开关频率范围。 另外的实施例提供包括至少两个振荡铁磁结构的磁阻器件，其中为至少两个振荡铁磁结构引起振荡的工作电流幅度的范围是不同的。 根据本发明的另外的实施例，提供了用于磁阻器件的写入方法。

公开(公告)号：US20130077391A1

公开(公告)日：2013-03-28

申请号：US13623741

申请日：2012-09-20

Applicant: Agency for Science, Technology and Research

Inventor： Yuanhong LUO ,  Rachid SBIAA ,  Yan Hwee Sunny LUA

IPC: H01L29/82 ,  G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.