公开(公告)号：US20130108889A1

公开(公告)日：2013-05-02

申请号：US13660500

申请日：2012-10-25

Applicant: Agency for Science, Technology and Research

Inventor： Seidikkurippu Nellainayagam PIRAMANAYAGAM ,  Rachid SBIAA ,  Taiebeh TAHMASEBI

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/5607 ,  Y10T428/1121

Abstract: According to embodiments of the present invention, a magnetoresistance device is provided. The magnetoresistance device includes a hard magnetic layer and a soft magnetic layer arranged one over the other, wherein the soft magnetic layer includes a stack structure, the stack structure including a first layer and a second layer arranged one over the other, wherein the first layer has a first damping factor and the second layer has a second damping factor, the first damping factor is selected to be lower than the second damping factor.

Abstract translation: 根据本发明的实施例，提供了一种磁阻装置。 磁阻器件包括彼此排列的硬磁性层和软磁性层，其中软磁性层包括堆叠结构，该堆叠结构包括一个彼此排列的第一层和第二层，其中第一层 具有第一阻尼因子，并且第二层具有第二阻尼因子，第一阻尼因子被选择为低于第二阻尼因子。

公开(公告)号：US20130077391A1

公开(公告)日：2013-03-28

申请号：US13623741

申请日：2012-09-20

Applicant: Agency for Science, Technology and Research

Inventor： Yuanhong LUO ,  Rachid SBIAA ,  Yan Hwee Sunny LUA

IPC: H01L29/82 ,  G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

公开(公告)号：US20150371697A1

公开(公告)日：2015-12-24

申请号：US14838254

申请日：2015-08-27

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Yuanhong LUO ,  Rachid SBIAA ,  Yan Hwee Sunny LUA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

Abstract translation: 根据本发明的实施例，提供了一种磁阻器件。 磁阻器件包括至少两个铁磁软层，其中至少两个铁磁软层具有不同的磁化开关频率范围。 另外的实施例提供包括至少两个振荡铁磁结构的磁阻器件，其中为至少两个振荡铁磁结构引起振荡的工作电流幅度的范围是不同的。 根据本发明的另外的实施例，提供了用于磁阻器件的写入方法。