公开(公告)号：US20130153953A1

公开(公告)日：2013-06-20

申请号：US13328796

申请日：2011-12-16

申请人： Ahmed Elasser ,  Arthur Stephen Daley ,  Alexey Vert ,  Stanislav I. Soloviev ,  Peter Almern Losee

发明人： Ahmed Elasser ,  Arthur Stephen Daley ,  Alexey Vert ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC分类号： H01L27/06 ,  H01L21/332

CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

公开(公告)号：US08536617B2

公开(公告)日：2013-09-17

申请号：US13328796

申请日：2011-12-16

申请人： Alexey Vert ,  Ahmed Elasser ,  Arthur Stephen Daley ,  Stanislav I Soloviev ,  Peter Almern Losee

发明人： Alexey Vert ,  Ahmed Elasser ,  Arthur Stephen Daley ,  Stanislav I Soloviev ,  Peter Almern Losee

IPC分类号： H01L31/101

CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。