公开(公告)号：US20140070229A1

公开(公告)日：2014-03-13

申请号：US13610614

申请日：2012-09-11

申请人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

发明人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC分类号： H01L29/20 ,  H01L21/768 ,  H01L29/161

CPC分类号： H01L29/0661 ,  H01L21/02107 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/87

摘要： An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction.

摘要翻译： 电气装置包括设置在基底层顶部的阻挡层，其中阻挡层和基底层各自是宽带隙半导体，并且阻挡层和基底层在电气装置中形成掩埋结。 该装置包括设置在阻挡层的表面处的端接特征和靠近端接特征设置的填充沟槽。 填充的沟槽延伸穿过阻挡层以到达衬底层并且被配置为将与掩埋结相关联的电势引导到设置在阻挡层表面附近的端接特征以终止掩埋结。

公开(公告)号：US20130153953A1

公开(公告)日：2013-06-20

申请号：US13328796

申请日：2011-12-16

申请人： Ahmed Elasser ,  Arthur Stephen Daley ,  Alexey Vert ,  Stanislav I. Soloviev ,  Peter Almern Losee

发明人： Ahmed Elasser ,  Arthur Stephen Daley ,  Alexey Vert ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC分类号： H01L27/06 ,  H01L21/332

CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

公开(公告)号：US09006027B2

公开(公告)日：2015-04-14

申请号：US13610614

申请日：2012-09-11

申请人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

发明人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC分类号： H01L21/00 ,  H01L31/0328 ,  H01L29/06 ,  H01L29/74 ,  H01L29/87 ,  H01L21/02 ,  H01L29/73 ,  H01L29/739 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/0661 ,  H01L21/02107 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/87

摘要： An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction.

摘要翻译： 电气装置包括设置在基底层顶部的阻挡层，其中阻挡层和基底层各自是宽带隙半导体，并且阻挡层和基底层在电气装置中形成掩埋结。 该装置包括设置在阻挡层的表面处的端接特征和靠近端接特征设置的填充沟槽。 填充的沟槽延伸穿过阻挡层以到达衬底层并且被配置为将与掩埋结相关联的电势引导到设置在阻挡层表面附近的端接特征以终止掩埋结。

公开(公告)号：US08536617B2

公开(公告)日：2013-09-17

申请号：US13328796

申请日：2011-12-16

申请人： Alexey Vert ,  Ahmed Elasser ,  Arthur Stephen Daley ,  Stanislav I Soloviev ,  Peter Almern Losee

发明人： Alexey Vert ,  Ahmed Elasser ,  Arthur Stephen Daley ,  Stanislav I Soloviev ,  Peter Almern Losee

IPC分类号： H01L31/101

CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。