公开(公告)号：US10192734B2

公开(公告)日：2019-01-29

申请号：US15661576

申请日：2017-07-27

申请人： Air Liquide Advanced Materials, Inc. ,  L'Air Liquide, Société Anonyme pour l;etude et l'Exploitation des Procédés Georges Claude ,  Air Liquide Advanced Materials LLC

发明人： Antonio Sanchez ,  Gennadiy Itov ,  Reno Pesaresi ,  Jean-Marc Girard ,  Peng Zhang ,  Manish Khandelwal

IPC分类号： H01L21/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40

摘要： Si-containing film forming compositions comprising Si—C free and volatile silazane-containing precursors are disclosed. The compositions may be used to deposit high purity thin films. The Si—C free and volatile silazane-containing precursors have the formulae: [(SiR3)2NSiH2]m—NH2-m—C≡N, with m=1 or 2;  (a) [(SiR3)2NSiH2]n—NL3-n,with n=2 or 3;  (b) (SiH3)2NSiH2—O—SiH2N(SiH3)2; and  (c) (SiR′3)2N—SiH2—N(SiR′3)2;  (d) with each R independently selected from H, a dialkylamino group, or an amidinate; each R′ independently selected from H, a dialkylamino group, or an amidinate, with the provision that all R′ are not H; and L is selected from H or a C1-C6 hydrocarbyl group.

公开(公告)号：US20180099872A1

公开(公告)日：2018-04-12

申请号：US15836518

申请日：2017-12-08

申请人： Air Liquide Advanced Materials LLC ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  Air Liquide Advanced Materials, Inc. ,  American Air Liquide, Inc.

发明人： Cole RITTER ,  Gennadiy Itov ,  Manish Khandelwal ,  Jean-Marc Girard ,  Glenn Kuchenbeiser ,  Sean Kerrigan ,  Peng Zhang ,  Larry Kit-wing Leung

IPC分类号： C01B33/107 ,  C23C16/30 ,  C23C16/448 ,  C23C16/455

CPC分类号： C01B33/107 ,  C23C16/30 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/45525

摘要： Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.