公开(公告)号：US20180099872A1

公开(公告)日：2018-04-12

申请号：US15836518

申请日：2017-12-08

申请人： Air Liquide Advanced Materials LLC ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  Air Liquide Advanced Materials, Inc. ,  American Air Liquide, Inc.

发明人： Cole RITTER ,  Gennadiy Itov ,  Manish Khandelwal ,  Jean-Marc Girard ,  Glenn Kuchenbeiser ,  Sean Kerrigan ,  Peng Zhang ,  Larry Kit-wing Leung

IPC分类号： C01B33/107 ,  C23C16/30 ,  C23C16/448 ,  C23C16/455

CPC分类号： C01B33/107 ,  C23C16/30 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/45525

摘要： Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

公开(公告)号：US20160046408A1

公开(公告)日：2016-02-18

申请号：US14924623

申请日：2015-10-27

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc. ,  Air Liquide Advanced Materials, Inc.

发明人： Jean-Marc Girard ,  Glenn Kuchenbeiser ,  Nicolas Blasco ,  Vincent Omarjee ,  Venkateswara Pallem

IPC分类号： B65D25/14 ,  C23C16/455 ,  C23C16/06 ,  B65D85/00

CPC分类号： B65D25/14 ,  B65D85/70 ,  C23C14/243 ,  C23C16/045 ,  C23C16/06 ,  C23C16/403 ,  C23C16/4402 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45555

摘要： Provided is a vessel having internally wettable surfaces therein coated with one or more barrier layers to, for example, inhibit contamination of a material, such as a metal halide, contained in the vessel.

摘要翻译： 提供了一种其内部可润湿表面的容器，其中涂覆有一个或多个阻挡层，以例如抑制包含在容器中的诸如金属卤化物的材料的污染。

公开(公告)号：US11261202B2

公开(公告)日：2022-03-01

申请号：US16603358

申请日：2017-04-07

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  AIR LIQUIDE ADVANCED MATERIALS, INC. ,  Manish Khandelwal ,  Reno Pesaresi ,  Jean-Marc Girard

发明人： Manish Khandelwal ,  Reno Pesaresi ,  Jean-Marc Girard

IPC分类号： C07F7/08 ,  B01J31/02 ,  C07F7/12

摘要： Selective reduction methods for halogenated carbosilanes and carbodisilanes are disclosed. More particularly, high yields of the desired carbosilanes and carbodisilanes are obtained by reduction of their halogenated counterparts using a reducing agent and tetrabutylphosphonium chloride (TBPC) as a catalyst.

公开(公告)号：US10106425B2

公开(公告)日：2018-10-23

申请号：US15159454

申请日：2016-05-19

申请人： Air Liquide Advanced Materials, Inc. ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Sean Kerrigan ,  Zhiwen Wan ,  Jean-Marc Girard

IPC分类号： C01B33/107

摘要： Disclosed are methods of selectively synthesizing inorganic silanes, such as halosilane and dihalosilane, comprising the step of reacting the halide or halogen (i.e., HX or X2 wherein X is Cl, Br, or I) with RSiH3, wherein R is an unsaturated C4 to C8 cyclic hydrocarbon or heterocycle group, provided that a C6 cyclic aromatic includes at least one hydrocarbyl ligand, in the presence of a catalyst, to produce RH and the inorganic silane having the formula SixHaXb, wherein x=1-4; a=1-9; b=1-9; and a+b=2x+2.

公开(公告)号：US10669160B2

公开(公告)日：2020-06-02

申请号：US15966799

申请日：2018-04-30

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Feng Li ,  Zhiwen Wan ,  Claudia Fafard ,  Stefan Wiese ,  Guillaume Husson ,  Grigory Nikiforov ,  Bin Sui ,  Jean-Marc Girard

IPC分类号： C01G41/04

摘要： Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

公开(公告)号：US20190330076A1

公开(公告)日：2019-10-31

申请号：US15966799

申请日：2018-04-30

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin LIU ,  Feng LI ,  Zhiwen WAN ,  Claudia FAFARD ,  Stefan WIESE ,  Guillaume HUSSON ,  Grigory NIKIFOROV ,  Bin SUI ,  Jean-Marc Girard

IPC分类号： C01G41/04

摘要： Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

公开(公告)号：US11821080B2

公开(公告)日：2023-11-21

申请号：US17193046

申请日：2021-03-05

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Rocio Alejandra Arteaga Muller ,  Nicolas Blasco ,  Jean-Marc Girard ,  Feng Li ,  Venkateswara R. Pallem ,  Zhengning Gao

IPC分类号： C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/34 ,  C23C16/06 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02172

摘要： A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

公开(公告)号：US11739220B2

公开(公告)日：2023-08-29

申请号：US16971869

申请日：2019-02-21

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Antonio Sanchez ,  Gennadiy Itov ,  Manish Khandelwal ,  Cole Ritter ,  Peng Zhang ,  Jean-Marc Girard ,  Zhiwen Wan ,  Glenn Kuchenbeiser ,  David Orban ,  Sean Kerrigan ,  Reno Pesaresi ,  Matthew Damien Stephens ,  Yang Wang ,  Guillaume Husson ,  Grigory Nikiforov

IPC分类号： C09D1/00 ,  C09D7/63 ,  B05D1/00 ,  B05D3/02 ,  C01B21/068 ,  C01B21/087 ,  C01B33/12 ,  C23C18/12

CPC分类号： C09D1/00 ,  B05D1/005 ,  B05D3/0254 ,  C01B21/068 ,  C01B21/087 ,  C01B33/126 ,  C09D7/63 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1279

摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

公开(公告)号：US11499014B2

公开(公告)日：2022-11-15

申请号：US16731728

申请日：2019-12-31

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Jean-Marc Girard ,  Peng Zhang ,  Fan Qin ,  Gennadiy Itov ,  Fabrizio Marchegiani ,  Thomas J. Larrabee

IPC分类号： C08G77/12 ,  B05D1/00 ,  B05D3/02 ,  C08G77/26 ,  C08G77/08

摘要： Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

公开(公告)号：US11407922B2

公开(公告)日：2022-08-09

申请号：US16087464

申请日：2017-03-23

申请人： American Air Liquide, Inc. ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  Manish Khandelwal ,  Sean Kerrigan ,  Jean-Marc Girard ,  Antonio Sanchez ,  Peng Zhang ,  Yang Wang

发明人： Manish Khandelwal ,  Sean Kerrigan ,  Jean-Marc Girard ,  Antonio Sanchez ,  Peng Zhang ,  Yang Wang

IPC分类号： C09D183/16 ,  C08G77/60 ,  C07F7/10 ,  C08G77/62 ,  C08G77/00

摘要： Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—R4R5Si—(CH2)t—SiR2R3—]n wherein n=2 to 400; R, R2, R3, R4, and R5 are independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R2, R3, R4, and R5 is H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [—NH—SiH2—CH2—SiH2—]n, and [—N(SiH2—CH2—SiH3)—SiH2—CH2—SiH2—]n.