公开(公告)号：US5605776A

公开(公告)日：1997-02-25

申请号：US515165

申请日：1995-08-15

申请人： Akihiko Isao ,  Susumu Kawada ,  Atsushi Hayashi ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

发明人： Akihiko Isao ,  Susumu Kawada ,  Atsushi Hayashi ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： A phase-shifting photomask blank has a transparent substrate, a phase-shifting film deposited on the transparent substrate, the phase-shifting film including a transversely central composition which results in a reduced rate of side etching, and a patterned photoresist film masking the phase-shifting film. When the phase-shifting film is dry-etched through the patterned photoresist film into a desired circuit pattern, transversely different rates of side etching of the phase-shifting film are substantially equalized due to the reduced rate of side etching resulting from the transversely central composition. The circuit pattern includes openings defined by removal of the phase-shifting film and shifters left between the openings. The shifters have respective side surfaces free of steps and extending substantially perpendicularly from the transparent substrate. If the phase-shifting film comprises a film of molybdenum silicide oxide nitride deposited by sputtering, then the proportion of a nitrogen mono oxide gas in a sputtering gas is adjusted to control the transversely central composition of the phase-shifting film.

摘要翻译： 相移光掩模坯料具有透明基板，沉积在透明基板上的相移膜，该移相膜包括导致侧蚀刻速率降低的横向中心组成，以及掩模相位的图案化光致抗蚀剂膜 换片 当相移膜通过图案化的光致抗蚀剂膜被干蚀刻成所需的电路图形时，相移膜的侧向蚀刻的横向不同速率基本上相等，这是由于横向中心组成产生的侧蚀刻速率降低 。 电路图案包括通过移除相移膜和在开口之间留下的移位器来限定的开口。 移位器具有相应的侧表面，并且从透明基底基本垂直延伸。 如果移相膜包括通过溅射沉积的硅化钼氧化物膜的膜，则调节溅射气体中的氮一氧化物气体的比例以控制相移膜的横向中心组成。

公开(公告)号：US07090947B2

公开(公告)日：2006-08-15

申请号：US09804158

申请日：2001-03-13

申请人： Susumu Kawada ,  Akihiko Isao ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

发明人： Susumu Kawada ,  Akihiko Isao ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

IPC分类号： G01F9/00 ,  C23C14/00 ,  C23C14/32

CPC分类号： G03F1/32 ,  C23C14/0682 ,  C23C14/08 ,  C23C14/35 ,  G03F1/26

摘要： In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.

公开(公告)号：US07282308B2

公开(公告)日：2007-10-16

申请号：US11477425

申请日：2006-06-30

申请人： Susumu Kawada ,  Akihiko Isao ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

发明人： Susumu Kawada ,  Akihiko Isao ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  C23C14/0682 ,  C23C14/08 ,  C23C14/35 ,  G03F1/26

摘要： In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.

摘要翻译： 在半色调型移相掩模的形成中，设置反应气体导入口和惰性气体导入口，以分别引入各种气体，通过使用反应性低投射溅射法，形成硅化钼系移相膜 。 因此，通过使用硅化钼基材料，可以提供适用于ArF激光器或KrF激光器的半色调型相移掩模。

公开(公告)号：US06569577B1

公开(公告)日：2003-05-27

申请号：US09704697

申请日：2000-11-03

申请人： Akihiko Isao ,  Susumu Kawada ,  Shuichiro Kanai ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

发明人： Akihiko Isao ,  Susumu Kawada ,  Shuichiro Kanai ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： A phase-shift photo mask blank comprises a half tone phase-shift film, wherein the half tone phase-shift film consists of at least two layers and in the case of two layers, the refractive index of the upper layer of the film is smaller than that of the lower layer thereof; in the case of three layers, the refractive index of the intermediate layer is smaller than those observed for the upper and lower layers or the refractive index of the upper layer is smaller than that of an intermediate layer; in the case of at least 4 layers, the refractive index of the upper most layer is smaller than that of the layer immediately below the upper most layer. The photo mask blank permits the production of a phase-shift photo mask having a high transmittance at an exposure wavelength and a low reflectance as well as a low transmittance at a defect-inspection wavelength. The photo mask in turn permits the fabrication of a semiconductor device having a fine pattern.

摘要翻译： 相移光掩模坯料包括半色调相移膜，其中半色调相移膜由至少两层组成，并且在两层的情况下，膜的上层的折射率较小 比其下层的; 在三层的情况下，中间层的折射率小于上层和下层观察到的折射率，或者上层的折射率小于中间层的折射率; 在至少4层的情况下，最上层的折射率小于最上层的层的折射率。 光掩模空白允许制造在曝光波长和低反射率下具有高透射率以及在缺陷检查波长处的低透射率的相移光掩模。 光掩模又允许制造具有精细图案的半导体器件。

公开(公告)号：US20070009810A1

公开(公告)日：2007-01-11

申请号：US11477425

申请日：2006-06-30

申请人： Susumu Kawada ,  Akihiko Isao ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

发明人： Susumu Kawada ,  Akihiko Isao ,  Nobuyuki Yoshioka ,  Kazuyuki Maetoko

IPC分类号： C23C14/00 ,  C23C14/32 ,  G03F1/00

CPC分类号： G03F1/32 ,  C23C14/0682 ,  C23C14/08 ,  C23C14/35 ,  G03F1/26

摘要： In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.

公开(公告)号：US5952128A

公开(公告)日：1999-09-14

申请号：US633338

申请日：1996-04-17

申请人： Akihiko Isao ,  Susumu Kawada ,  Yoshihiro Saito ,  Tsuneo Yamamoto ,  Atsushi Hayashi ,  Nobuyuki Yoshioka ,  Akira Chiba ,  Junji Miyazaki

发明人： Akihiko Isao ,  Susumu Kawada ,  Yoshihiro Saito ,  Tsuneo Yamamoto ,  Atsushi Hayashi ,  Nobuyuki Yoshioka ,  Akira Chiba ,  Junji Miyazaki

IPC分类号： C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32 ,  C23C14/0676 ,  C23C14/3414

摘要： A phase-shifting photomask blank is made by sputtering a target of molybdenum suicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.

摘要翻译： 通过以2.65-6.47体积％的比例加入一氧化氮的溅射气体溅射硅化钼靶，制成相移光掩模坯料。 在透明基板上形成硅化钼作为移相膜的氮化氧化物膜。 基底相移膜可以形成在透明基板上，然后可以通过用溅射气体溅射硅化钼靶，在基底相移膜的顶部上形成作为表面层的硅化钼的氮化氧化物膜 加入一氧化氮的比例为0.59-6.47％（体积）。 其上形成有切割钼的氮化氧化物膜的透明基板可以在200℃以上的温度下进行热处理。

公开(公告)号：US5938897A

公开(公告)日：1999-08-17

申请号：US876906

申请日：1997-06-16

申请人： Akihiko Isao ,  Susumu Kawada ,  Yoshihiro Saito ,  Tsuneo Yamamoto ,  Atsushi Hayashi ,  Nobuyuki Yoshioka ,  Akira Chiba ,  Junji Miyazaki

发明人： Akihiko Isao ,  Susumu Kawada ,  Yoshihiro Saito ,  Tsuneo Yamamoto ,  Atsushi Hayashi ,  Nobuyuki Yoshioka ,  Akira Chiba ,  Junji Miyazaki

IPC分类号： C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  C23C14/14

CPC分类号： G03F1/32 ,  C23C14/0676 ,  C23C14/3414

摘要： A phase-shifting photomask blank is made by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.

摘要翻译： 通过用溅射气体以2.65-6.47体积％的比例加入一氧化氮，溅射硅化钼靶，制成相移光掩模坯料。 在透明基板上形成硅化钼作为移相膜的氮化氧化物膜。 基底相移膜可以形成在透明基板上，然后可以通过用溅射气体溅射硅化钼靶，在基底相移膜的顶部上形成作为表面层的硅化钼的氮化氧化物膜 加入一氧化氮的比例为0.59-6.47％（体积）。 其上形成有切割钼的氮化氧化物膜的透明基板可以在200℃以上的温度下进行热处理。

公开(公告)号：US06228541B1

公开(公告)日：2001-05-08

申请号：US09292936

申请日：1999-04-16

申请人： Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi ,  Nobuyuki Yoshioka

发明人： Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi ,  Nobuyuki Yoshioka

IPC分类号： G03F900

CPC分类号： C23C14/0057 ,  C23C14/0676 ,  C23C14/50 ,  G03F1/32

摘要： A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation. The phase-shifting photomask blank thus prepared is subjected to a patterning treatment to form a phase-shifting photomask.

摘要翻译： 可以通过反应溅射技术在衬底上沉积薄膜，同时在溅射靶上通过至少四次衬底来形成均匀的薄移相光掩模坯料。 在坯料的形成中，使用NO气体作为反应气体，使用由钼和硅的混合物构成的靶作为溅射靶，并且使用透明衬底作为薄膜形成衬底，以形成 透明基板，能够透射具有强度的光线的透光膜，其不能显着地有助于曝光。 此外，膜在基板上通过沿基板输送方向具有足够长的长度的开口形成，使得目标成分的沉积速率不大于其最大值的90％的均匀区域也有贡献 到电影形成。 将如此制备的相移光掩模坯料进行图案化处理以形成相移光掩模。

公开(公告)号：US5482799A

公开(公告)日：1996-01-09

申请号：US318156

申请日：1994-10-05

申请人： Akihiko Isao ,  Susumu Kawada ,  Nobuyuki Yoshioka

发明人： Akihiko Isao ,  Susumu Kawada ,  Nobuyuki Yoshioka

IPC分类号： G03F1/32 ,  G03F1/40 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： A phase shift mask of the present invention includes a quartz substrate transmitting exposure light, a transmitting film having a predetermined transmittance formed on the main surface of quartz substrate, a light transmitting portion from which quartz substrate is exposed is formed in a predetermined region, and a phase shifter portion formed of a single material on light transmitting film converting the phase angle by approximately 180.degree. and having a transmittance of 3-20% with respect to the exposure light transmitted through light transmitting portion. As a result, a defect generated in the phase shifter portion can be easily detected with an ordinary defect inspection apparatus without deteriorating the phase shifter portion as a phase shift mask.

摘要翻译： 本发明的相移掩模包括透射曝光光的石英基板，在石英基板的主表面上形成的具有预定透射率的透射膜，在预定区域形成有石英基板暴露的透光部，以及 一个移相器部分，由单一材料形成在透光膜上，将相位角转换大约180度，透射率相对于透过透光部分的曝光光线的透射率为3-20％。 结果，可以用通常的缺陷检查装置容易地检测移相器部分中产生的缺陷，而不会使相移部分劣化为相移掩模。

公开(公告)号：US06689515B2

公开(公告)日：2004-02-10

申请号：US09805902

申请日：2001-03-15

申请人： Nobuyuki Yoshioka ,  Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi

发明人： Nobuyuki Yoshioka ,  Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi

IPC分类号： G03F900

CPC分类号： C23C14/0057 ,  C23C14/0676 ,  C23C14/50 ,  G03F1/32

摘要： A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation. The phase-shifting photomask blank thus prepared is subjected to a patterning treatment to form a phase-shifting photomask.

摘要翻译： 可以通过反应溅射技术在衬底上沉积薄膜，同时在溅射靶上通过至少四次衬底来形成均匀的薄移相光掩模坯料。 在坯料的形成中，使用NO气体作为反应气体，使用由钼和硅的混合物构成的靶作为溅射靶，并且使用透明衬底作为薄膜形成衬底，以形成 透明基板，能够透射具有强度的光线的透光膜，其不能显着地有助于曝光。 此外，膜在基板上通过沿着基板输送方向具有足够长的长度的开口形成，使得目标成分的成膜速度不超过其最大值的90％的均匀区域也有贡献 到电影形成。 将如此制备的相移光掩模坯料进行图案化处理以形成相移光掩模。