公开(公告)号：US20050284518A1

公开(公告)日：2005-12-29

申请号：US11159233

申请日：2005-06-23

申请人： Akimasa Yamada ,  Hitoshi Tampo ,  Koji Matsubara ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Kakuya Iwata

发明人： Akimasa Yamada ,  Hitoshi Tampo ,  Koji Matsubara ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Kakuya Iwata

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0749 ,  Y02E10/541

摘要： A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.

摘要翻译： 一种太阳能电池，其特征在于，包括背面金属电极和在基板上依次包含p型CIGS半导体的光吸收层，其中所述太阳能电池还包括p型或低载流子浓度的n型半导体层，其包含ZnO 在光吸收层和背面金属电极之间，以及太阳能电池的制造方法。

公开(公告)号：US20100163864A1

公开(公告)日：2010-07-01

申请号：US12601248

申请日：2008-05-13

申请人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

发明人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

IPC分类号： H01L33/00

CPC分类号： H01L33/28

摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x

摘要翻译： 本发明的目的在于提高ZnO系光半导体装置的发光效率。 光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光 电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

公开(公告)号：US08304804B2

公开(公告)日：2012-11-06

申请号：US12601248

申请日：2008-05-13

申请人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

发明人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

IPC分类号： H01L33/00

CPC分类号： H01L33/28

摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x

摘要翻译： 本发明的目的在于提高ZnO系光半导体装置的发光效率。 光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光 电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x