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公开(公告)号：US20120258604A1
公开(公告)日：2012-10-11
申请号：US13517193
申请日：2010-11-25
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/45523 , H01L21/022 , H01L21/02274 , H01L27/14618 , H01L27/14665 , H01L27/14683 , H01L2224/13
摘要： A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.
摘要翻译： 可以使用获得小膜厚比的沉积气体和获得大的膜厚比的沉积气体来形成具有预定膜厚比的氧化膜的沉积方法。 当在衬底的表面上形成比在孔的底表面上具有更大膜厚的氧化膜时，使得形成在衬底的表面上的氧化膜与形成在底表面上的氧化膜的膜厚比 的孔变成规定的比例，由包含四乙氧基硅烷和氧气的混合气体产生等离子体，形成氧化膜，然后由包含硅烷和一氧化二氮的气体混合物产生等离子体。
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公开(公告)号：US08673781B2
公开(公告)日：2014-03-18
申请号：US13318279
申请日：2010-09-06
IPC分类号： H01L21/302
CPC分类号： H01L21/0475 , H01L21/3065 , H01L29/1608
摘要： The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.
摘要翻译： 本发明涉及一种可以高精度地蚀刻宽间隙半导体衬底的等离子体蚀刻方法。 将惰性气体供给到处理室中，从惰性气体产生等离子体，将偏置电位施加到放置宽间隙半导体基板的压板上，由此产生由惰性气体产生等离子体产生的离子 入射到压板上的半导体衬底上从而加热半导体衬底。 在半导体衬底的温度达到200℃至400℃的蚀刻温度之后，将蚀刻气体供应到处理室中，并且从蚀刻气体产生等离子体，并且将偏置电位施加到压板，由此 在将半导体衬底的温度保持在蚀刻温度的同时蚀刻半导体衬底。
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公开(公告)号：US08598049B2
公开(公告)日：2013-12-03
申请号：US13517193
申请日：2010-11-25
IPC分类号： H01L21/762 , H01L21/768
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/45523 , H01L21/022 , H01L21/02274 , H01L27/14618 , H01L27/14665 , H01L27/14683 , H01L2224/13
摘要： A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.
摘要翻译： 可以使用获得小膜厚比的沉积气体和获得大的膜厚比的沉积气体来形成具有预定膜厚比的氧化膜的沉积方法。 当在衬底的表面上形成比在孔的底表面上具有更大膜厚的氧化膜时，使得形成在衬底的表面上的氧化膜与形成在底表面上的氧化膜的膜厚比 的孔变成规定的比例，由包含四乙氧基硅烷和氧气的混合气体产生等离子体，形成氧化膜，然后由包含硅烷和一氧化二氮的气体混合物产生等离子体。
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公开(公告)号：US20120052688A1
公开(公告)日：2012-03-01
申请号：US13318279
申请日：2010-09-06
IPC分类号： H01L21/302
CPC分类号： H01L21/0475 , H01L21/3065 , H01L29/1608
摘要： The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.
摘要翻译： 本发明涉及一种可以高精度地蚀刻宽间隙半导体衬底的等离子体蚀刻方法。 将惰性气体供给到处理室中，从惰性气体产生等离子体，将偏置电位施加到放置宽间隙半导体基板的压板上，由此产生由惰性气体产生等离子体产生的离子 入射到压板上的半导体衬底上从而加热半导体衬底。 在半导体衬底的温度达到200℃至400℃的蚀刻温度之后，将蚀刻气体供应到处理室中，并且从蚀刻气体产生等离子体，并且将偏置电位施加到压板，由此 在将半导体衬底的温度保持在蚀刻温度的同时蚀刻半导体衬底。
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公开(公告)号：US20140220711A1
公开(公告)日：2014-08-07
申请号：US14238289
申请日：2012-05-22
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/509 , H01L21/0214 , H01L21/02274 , H01L22/12
摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
摘要翻译： 氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。 具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力 或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得 和/或独立地施加的用于形成氮化物膜的第二高频电力。
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公开(公告)号：US09117660B2
公开(公告)日：2015-08-25
申请号：US14238289
申请日：2012-05-22
IPC分类号： H01L21/02 , C23C16/34 , C23C16/509 , H01L21/66
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/509 , H01L21/0214 , H01L21/02274 , H01L22/12
摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
摘要翻译： 氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。 具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力 或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得 和/或独立地施加的用于形成氮化物膜的第二高频电力。
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