公开(公告)号：US20120258604A1

公开(公告)日：2012-10-11

申请号：US13517193

申请日：2010-11-25

申请人： Masayasu Hatashita ,  Akimitsu Oishi ,  Shoichi Murakami

发明人： Masayasu Hatashita ,  Akimitsu Oishi ,  Shoichi Murakami

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/022 ,  H01L21/02274 ,  H01L27/14618 ,  H01L27/14665 ,  H01L27/14683 ,  H01L2224/13

摘要： A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.

摘要翻译： 可以使用获得小膜厚比的沉积气体和获得大的膜厚比的沉积气体来形成具有预定膜厚比的氧化膜的沉积方法。 当在衬底的表面上形成比在孔的底表面上具有更大膜厚的氧化膜时，使得形成在衬底的表面上的氧化膜与形成在底表面上的氧化膜的膜厚比 的孔变成规定的比例，由包含四乙氧基硅烷和氧气的混合气体产生等离子体，形成氧化膜，然后由包含硅烷和一氧化二氮的气体混合物产生等离子体。

公开(公告)号：US08673781B2

公开(公告)日：2014-03-18

申请号：US13318279

申请日：2010-09-06

申请人： Akimitsu Oishi ,  Shoichi Murakami ,  Masayasu Hatashita

发明人： Akimitsu Oishi ,  Shoichi Murakami ,  Masayasu Hatashita

IPC分类号： H01L21/302

CPC分类号： H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

摘要： The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.

摘要翻译： 本发明涉及一种可以高精度地蚀刻宽间隙半导体衬底的等离子体蚀刻方法。 将惰性气体供给到处理室中，从惰性气体产生等离子体，将偏置电位施加到放置宽间隙半导体基板的压板上，由此产生由惰性气体产生等离子体产生的离子 入射到压板上的半导体衬底上从而加热半导体衬底。 在半导体衬底的温度达到200℃至400℃的蚀刻温度之后，将蚀刻气体供应到处理室中，并且从蚀刻气体产生等离子体，并且将偏置电位施加到压板，由此 在将半导体衬底的温度保持在蚀刻温度的同时蚀刻半导体衬底。

公开(公告)号：US08598049B2

公开(公告)日：2013-12-03

申请号：US13517193

申请日：2010-11-25

申请人： Masayasu Hatashita ,  Akimitsu Oishi ,  Shoichi Murakami

发明人： Masayasu Hatashita ,  Akimitsu Oishi ,  Shoichi Murakami

IPC分类号： H01L21/762 ,  H01L21/768

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/022 ,  H01L21/02274 ,  H01L27/14618 ,  H01L27/14665 ,  H01L27/14683 ,  H01L2224/13

摘要： A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.

摘要翻译： 可以使用获得小膜厚比的沉积气体和获得大的膜厚比的沉积气体来形成具有预定膜厚比的氧化膜的沉积方法。 当在衬底的表面上形成比在孔的底表面上具有更大膜厚的氧化膜时，使得形成在衬底的表面上的氧化膜与形成在底表面上的氧化膜的膜厚比 的孔变成规定的比例，由包含四乙氧基硅烷和氧气的混合气体产生等离子体，形成氧化膜，然后由包含硅烷和一氧化二氮的气体混合物产生等离子体。

公开(公告)号：US20120052688A1

公开(公告)日：2012-03-01

申请号：US13318279

申请日：2010-09-06

申请人： Akimitsu Oishi ,  Shoichi Murakami ,  Masayasu Hatashita

发明人： Akimitsu Oishi ,  Shoichi Murakami ,  Masayasu Hatashita

IPC分类号： H01L21/302

CPC分类号： H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

摘要： The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.

摘要翻译： 本发明涉及一种可以高精度地蚀刻宽间隙半导体衬底的等离子体蚀刻方法。 将惰性气体供给到处理室中，从惰性气体产生等离子体，将偏置电位施加到放置宽间隙半导体基板的压板上，由此产生由惰性气体产生等离子体产生的离子 入射到压板上的半导体衬底上从而加热半导体衬底。 在半导体衬底的温度达到200℃至400℃的蚀刻温度之后，将蚀刻气体供应到处理室中，并且从蚀刻气体产生等离子体，并且将偏置电位施加到压板，由此 在将半导体衬底的温度保持在蚀刻温度的同时蚀刻半导体衬底。

公开(公告)号：US20140220711A1

公开(公告)日：2014-08-07

申请号：US14238289

申请日：2012-05-22

申请人： Shoichi Murakami ,  Masayasu Hatashita

发明人： Shoichi Murakami ,  Masayasu Hatashita

IPC分类号： H01L21/02 ,  H01L21/66

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/02274 ,  H01L22/12

摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.

摘要翻译： 氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。 具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力 或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得 和/或独立地施加的用于形成氮化物膜的第二高频电力。

公开(公告)号：US09117660B2

公开(公告)日：2015-08-25

申请号：US14238289

申请日：2012-05-22

申请人： Shoichi Murakami ,  Masayasu Hatashita

发明人： Shoichi Murakami ,  Masayasu Hatashita

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/509 ,  H01L21/66

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/02274 ,  H01L22/12

摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.

摘要翻译： 氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。 具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力 或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得 和/或独立地施加的用于形成氮化物膜的第二高频电力。

公开(公告)号：US08859434B2

公开(公告)日：2014-10-14

申请号：US13809624

申请日：2011-07-11

申请人： Akimitsu Oishi ,  Shoichi Murakami

发明人： Akimitsu Oishi ,  Shoichi Murakami

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L29/16

CPC分类号： H01L21/30655 ,  H01L29/1608

摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.

摘要翻译： 本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。 将碳化硅衬底K加热到等于或高于200℃的温度的第一蚀刻步骤，将SF6气体供应到处理室中，并且从SF 6气体产生等离子体，并且将偏置电位施加到 压板，从而各向同性地蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室中， 从SF6气体和O2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在硅上形成氧化硅膜作为钝化膜 交替地重复碳化物衬底K.

公开(公告)号：US20130115772A1

公开(公告)日：2013-05-09

申请号：US13809624

申请日：2011-07-11

申请人： Akimitsu Oishi ,  Shoichi Murakami

发明人： Akimitsu Oishi ,  Shoichi Murakami

IPC分类号： H01L21/3065

CPC分类号： H01L21/30655 ,  H01L29/1608

摘要： The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.

摘要翻译： 本发明涉及能够以更高的精度蚀刻碳化硅衬底的蚀刻方法。 将碳化硅衬底K加热至等于或高于200℃的第一蚀刻步骤，将SF 6气体供应到处理室中，并从SF 6气体产生等离子体，并将偏置电位施加到 压板，从而各向同性蚀刻碳化硅衬底K;以及第二蚀刻步骤，其中将碳化硅衬底K加热到等于或高于200℃的温度，将SF 6气体和O 2气体供应到处理室 并且从SF 6气体和O 2气体产生等离子体，并且将偏置电位施加到其上放置碳化硅衬底K的压板上，从而蚀刻碳化硅衬底K，同时在其上形成氧化硅膜作为钝化膜 交替地重复碳化硅衬底K.

公开(公告)号：US20070086143A1

公开(公告)日：2007-04-19

申请号：US10596161

申请日：2004-11-29

申请人： Yasuyuki Hayashi ,  Shoichi Murakami ,  Takeshi Habe ,  Naoya Ikemoto

发明人： Yasuyuki Hayashi ,  Shoichi Murakami ,  Takeshi Habe ,  Naoya Ikemoto

IPC分类号： H01T23/00

CPC分类号： H01J37/3211 ,  H01J37/321

摘要： A plasma generator for generating a plasma exhibiting a uniform etching rate in a circumferential direction of a sample and a plasma etching device enabling a uniform etching in a circumferential direction of a sample are provided. To generate a plasma of a process gas, the process gas is introduced into a plasma generating chamber while a predetermined pressure is kept, and a high-frequency alternating voltage is applied to a coil. By applying an alternating voltage is applied to a substrate electrode, the plasma generated in the plasma generating chamber is brought into a reaction chamber and a sample is etched. The coil is not wound in a uniform helical shape. One turn of the coil has a first winding portion wound horizontally or generally horizontally and a second winding portion wound at a sharply inclined angle.

摘要翻译： 提供一种等离子体发生器，用于产生在样品的圆周方向上具有均匀蚀刻速率的等离子体和能够在样品的圆周方向上均匀蚀刻的等离子体蚀刻装置。 为了产生处理气体的等离子体，在保持预定压力的同时将处理气体引入等离子体发生室，并且向线圈施加高频交流电压。 通过施加向基板电极施加交流电压，将等离子体发生室中产生的等离子体进入反应室，并对样品进行蚀刻。 线圈未卷绕成均匀的螺旋形状。 线圈的一圈具有水平地或大致水平地缠绕的第一绕组部分和以锐角倾斜地缠绕的第二绕组部分。

公开(公告)号：US20050059669A1

公开(公告)日：2005-03-17

申请号：US10944712

申请日：2004-09-21

申请人： Keiichi Ajito ,  Minoru Ishikawa ,  Dai Kubota ,  Shoichi Murakami ,  Mikio Yamamoto ,  Naokazu Yahata ,  Kazuyuki Fujishima ,  Makoto Oyama

发明人： Keiichi Ajito ,  Minoru Ishikawa ,  Dai Kubota ,  Shoichi Murakami ,  Mikio Yamamoto ,  Naokazu Yahata ,  Kazuyuki Fujishima ,  Makoto Oyama

IPC分类号： C07C229/54 ,  C07C229/60 ,  C07D239/14 ,  C07D239/42 ,  C07D401/12 ,  A61K31/496 ,  A61K31/454 ,  C07D43/02

CPC分类号： C04B35/632 ,  C07C229/54 ,  C07C229/60 ,  C07D239/14 ,  C07D239/42 ,  C07D401/12

摘要： An object of the present invention is to provide m-substituted benzoic acid derivatives having integrin αvβ3 antagonistic activity. The derivatives according to the present invention are compounds represented by formula (I) or pharmaceutically acceptable salts or solvates thereof, which are useful for the treatment or prevention of cardiovascular diseases, angiogenesis-related diseases, cerebrovascular diseases, cancers and metastasis thereof, immunological diseases, osteopathy and other diseases: wherein A represents an optionally substituted heterocyclic group containing two nitrogen atoms, a bicylic group or the like; D represents a bond, >NR4, >CR5R6, O, S, or —NR4—CR5R6—; X represents CH or N; R7 and R8 represent hydroxyl, alkyl or the like; Q represents >C═O or the like; R9 represents hydrogen, alkyl or the like; J represents a bond or alkylene; R10 represents optionally substituted hydroxyl, amino or the like; R11 represents hydrogen, alkyl or the like; m is 0 to 5; n is 0 to 4; and p and q are each 0 to 3.

摘要翻译： 本发明的目的是提供具有整合素α噬菌体拮抗活性的m取代苯甲酸衍生物。 根据本发明的衍生物是由式（I）表示的化合物或其药学上可接受的盐或溶剂化物，其可用于治疗或预防心血管疾病，血管生成相关疾病，脑血管疾病，癌症及其转移，免疫疾病 ，骨病和其他疾病：其中A表示任选取代的含有两个氮原子的杂环基团，二等基团等; D表示键，NR 4，CR 5 R 6，O，S或-NR 4 -CR 5 R 6 - 。 X表示CH或N; R 7和R 8代表羟基，烷基等; Q表示> C = O等; R 9表示氢，烷基等; J表示键或亚烷基; R 10表示任选取代的羟基，氨基等; R 11表示氢，烷基等; m为0〜5; n为0〜4; p和q各自为0〜3。