公开(公告)号：US20090203179A1

公开(公告)日：2009-08-13

申请号：US12423332

申请日：2009-04-14

申请人： Akira Fukumoto ,  Rie Watanabe

发明人： Akira Fukumoto ,  Rie Watanabe

IPC分类号： H01L21/8234

CPC分类号： H01L29/1083 ,  H01L29/7833

摘要： In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

摘要翻译： 在本发明中，半导体器件设置有形成在栅极绝缘膜上的栅电极，该栅电极由形成在第一导电类型的半导体层上的元件隔离区域和第二导电的源极区域和漏极区域 类型。 源极区域和漏极区域中的至少一个具有第一低浓度区域和高浓度区域。 此外，本发明的半导体器件在第一导电类型的第二低浓度区域之间设置在形成于元件隔离部之下的沟道阻挡区域与源极区域之间以及沟道阻挡区域与漏极区域之间。 栅电极正下方的半导体层沿着栅极突出到沟道截止区侧，半导体层和沟道截止区相互接触。

公开(公告)号：US20060231916A1

公开(公告)日：2006-10-19

申请号：US11399441

申请日：2006-04-07

申请人： Akira Fukumoto ,  Rie Watanabe

发明人： Akira Fukumoto ,  Rie Watanabe

IPC分类号： H01L29/00

CPC分类号： H01L29/1083 ,  H01L29/7833

摘要： In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

公开(公告)号：US07528442B2

公开(公告)日：2009-05-05

申请号：US11399441

申请日：2006-04-07

申请人： Akira Fukumoto ,  Rie Watanabe

发明人： Akira Fukumoto ,  Rie Watanabe

IPC分类号： H01L29/72

CPC分类号： H01L29/1083 ,  H01L29/7833

摘要： In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

摘要翻译： 在本发明中，半导体器件设置有形成在栅极绝缘膜上的栅电极，该栅电极由形成在第一导电类型的半导体层上的元件隔离区域和第二导电的源极区域和漏极区域 类型。 源极区域和漏极区域中的至少一个具有第一低浓度区域和高浓度区域。 此外，本发明的半导体器件在第一导电类型的第二低浓度区域之间设置在形成于元件隔离部之下的沟道阻挡区域与源极区域之间以及沟道阻挡区域与漏极区域之间。 栅电极正下方的半导体层沿着栅极突出到沟道截止区侧，半导体层和沟道截止区相互接触。

公开(公告)号：US08562895B2

公开(公告)日：2013-10-22

申请号：US12645538

申请日：2009-12-23

申请人： Yasushi Murakami ,  Hisanao Usami ,  Tomohiro Nishikawa ,  Takashi Tarao ,  Rie Watanabe ,  Masaaki Kawabe ,  Takashi Nishitani

发明人： Yasushi Murakami ,  Hisanao Usami ,  Tomohiro Nishikawa ,  Takashi Tarao ,  Rie Watanabe ,  Masaaki Kawabe ,  Takashi Nishitani

IPC分类号： B29C47/00

CPC分类号： D01D5/0038 ,  C04B35/6225 ,  C04B35/62259 ,  C04B35/6264 ,  C04B35/632 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/449 ,  C04B2235/5264 ,  C04B2235/5409 ,  D01F9/08

摘要： A process of manufacturing inorganic nanofibers, without using an organic polymer, using a highly reactive metal alkoxide such as titanium alkoxide or zirconium alkoxide, in particular, a process in which inorganic nanofibers can be stably produced over a long period, is provided. It is a process of manufacturing inorganic nanofibers by electrospinning using a sol solution containing an inorganic component as a main component, characterized in that the sol solution contains a metal alkoxide having a high reactivity and a salt catalyst, and that the salt catalyst is an amine compound having an N—N bond, an N—O bond, an N—C═N bond, or an N—C═S bond.

摘要翻译： 提供了使用高活性金属醇盐如烷氧化钛或烷氧基锆，而不使用有机聚合物的无机纳米纤维的制造方法，特别是可以长期稳定地生产无机纳米纤维的方法。 该方法是使用以无机成分为主要成分的溶胶溶液进行静电纺丝制造无机纳米纤维的工序，其特征在于，所述溶胶溶液含有高反应性的金属醇盐和盐催化剂，所述盐催化剂为胺 具有NN键，NO键，NC = N键或NC = S键的化合物。

公开(公告)号：US09023743B2

公开(公告)日：2015-05-05

申请号：US13144632

申请日：2010-01-14

申请人： Rie Watanabe ,  Takashi Tarao ,  Masaaki Kawabe ,  Tetsu Yamaguchi ,  Shinji Sakai ,  Koei Kawakami

发明人： Rie Watanabe ,  Takashi Tarao ,  Masaaki Kawabe ,  Tetsu Yamaguchi ,  Shinji Sakai ,  Koei Kawakami

IPC分类号： B32B5/02 ,  B32B17/00 ,  B29C39/14 ,  B29C41/24 ,  B29C47/00 ,  D04H1/728 ,  D04H1/4209 ,  D04H1/587

CPC分类号： D04H1/728 ,  D04H1/4209 ,  D04H1/587 ,  Y10S977/762 ,  Y10T428/249953 ,  Y10T428/298 ,  Y10T442/2926

摘要： An inorganic fiber structure comprising inorganic nanofibers having an average fiber diameter of 3 μm or less, in which an entirety including the inside thereof is adhered with an inorganic adhesive, and the porosity thereof is 90% or more, is disclosed. Furthermore, a process for producing an inorganic fiber structure is disclosed, which includes (i) a step of spinning inorganic fibers by an electrospinning method, from a spinning inorganic sol solution containing a compound mainly composed of an inorganic component; (ii) a step of forming an inorganic fiber aggregate by irradiating the inorganic fibers with ions having a polarity opposite to that of the inorganic fibers to accumulate the inorganic fibers; and (iii) a step of forming an inorganic fiber structure adhering to the inorganic fiber aggregate with an inorganic adhesive in an entirety including the inside thereof, in which an adhering inorganic sol solution containing a compound mainly composed of an inorganic component is imparted to an entirety including the inside of the inorganic fiber aggregate, and an excess adhering inorganic sol solution is removed by gas-through.

摘要翻译： 公开了一种无机纤维结构体，其包含平均纤维直径为3μm以下的无机纳米纤维，其中整体包含其内部的无机粘合剂，其孔隙率为90％以上。 此外，公开了一种无机纤维结构体的制造方法，其包括：（i）通过静电纺丝法从含有主要由无机成分组成的化合物的纺丝无机溶胶溶液中纺出无机纤维的工序; （ii）通过用与无机纤维极性相反的离子照射无机纤维来形成无机纤维聚集体以累积无机纤维的步骤; 和（iii）通过无机粘合剂将无机纤维集合体附着在无机纤维集合体上的整体包括内部的步骤，其中将含有主要由无机成分组成的化合物的粘附性无机溶胶溶液赋予 包括无机纤维集合体的内部的全部和通过气体通过除去过量粘附的无机溶胶溶液。

公开(公告)号：US08062567B2

公开(公告)日：2011-11-22

申请号：US12420304

申请日：2009-04-08

申请人： Rie Watanabe ,  Takashi Tarao ,  Masaaki Kawabe

发明人： Rie Watanabe ,  Takashi Tarao ,  Masaaki Kawabe

IPC分类号： B29C47/00 ,  D04H13/00 ,  H05B6/00

CPC分类号： D01F6/18 ,  D01D5/0038 ,  D01F1/10 ,  Y10T442/60

摘要： A process for manufacturing organic fibers containing an inorganic component comprising the steps of: (1) preparing an inorganic spinnable sol solution; (2) mixing the inorganic spinnable sol solution, a solvent capable of dissolving the inorganic spinnable sol solution, and an organic polymer capable of being dissolved in the solvent to prepare a spinning solution; and (3) spinning the spinning solution to form the organic fibers containing an inorganic component composed of an inorganic gel and the organic polymer, is disclosed. The inorganic spinnable sol solution preferably has a weight average molecular weight of 10,000 or more, and the inorganic spinnable sol solution is preferably prepared from a material containing a metal alkoxide having an organic substituent. According to the process of the present invention, organic fibers containing an inorganic component having an improved mechanical strength can be produced by mixing an inorganic component into an organic component, and a nonwoven fabric containing the fibers can be provided.

摘要翻译： 一种制造含有无机成分的有机纤维的方法，包括以下步骤：（1）制备无机可纺性溶胶溶液; （2）混合无机可纺溶胶溶液，能够溶解无机可纺溶胶溶剂的溶剂和能够溶解在溶剂中的有机聚合物以制备纺丝溶液; 和（3）纺丝纺丝溶液以形成含有由无机凝胶和有机聚合物组成的无机组分的有机纤维。 无机可纺溶胶溶液的重均分子量优选为10,000以上，无机可纺性溶胶溶液优选由含有有机取代基的金属醇盐的材料制成。 根据本发明的方法，可以通过将无机组分混合到有机组分中来制备含有机械强度提高的无机组分的有机纤维，并且可以提供含纤维的非织造织物。

公开(公告)号：US20110274927A1

公开(公告)日：2011-11-10

申请号：US13144632

申请日：2010-01-14

申请人： Rie Watanabe ,  Takashi Tarao ,  Masaaki Kawabe ,  Tetsu Yamaguchi ,  Koei Kawakami

发明人： Rie Watanabe ,  Takashi Tarao ,  Masaaki Kawabe ,  Tetsu Yamaguchi ,  Koei Kawakami

IPC分类号： D02G3/00 ,  D04H3/12

CPC分类号： D04H1/728 ,  D04H1/4209 ,  D04H1/587 ,  Y10S977/762 ,  Y10T428/249953 ,  Y10T428/298 ,  Y10T442/2926

摘要： An inorganic fiber structure comprising inorganic nanofibers having an average fiber diameter of 3 μm or less, in which an entirety including the inside thereof is adhered with an inorganic adhesive, and the porosity thereof is 90% or more, is disclosed. Furthermore, a process for producing an inorganic fiber structure is disclosed, which includes (i) a step of spinning inorganic fibers by an electrospinning method, from a spinning inorganic sol solution containing a compound mainly composed of an inorganic component; (ii) a step of forming an inorganic fiber aggregate by irradiating the inorganic fibers with ions having a polarity opposite to that of the inorganic fibers to accumulate the inorganic fibers; and (iii) a step of forming an inorganic fiber structure adhering to the inorganic fiber aggregate with an inorganic adhesive in an entirety including the inside thereof, in which an adhering inorganic sol solution containing a compound mainly composed of an inorganic component is imparted to an entirety including the inside of the inorganic fiber aggregate, and an excess adhering inorganic sol solution is removed by gas-through.

摘要翻译： 公开了一种无机纤维结构体，其包含平均纤维直径为3μm以下的无机纳米纤维，其中整体包含其内部的无机粘合剂，其孔隙率为90％以上。 此外，公开了一种无机纤维结构体的制造方法，其包括：（i）通过静电纺丝法从含有主要由无机成分组成的化合物的纺丝无机溶胶溶液中纺出无机纤维的工序; （ii）通过用与无机纤维极性相反的离子照射无机纤维来形成无机纤维聚集体以累积无机纤维的步骤; 和（iii）通过无机粘合剂将无机纤维集合体附着在无机纤维集合体上的整体包括内部的步骤，其中将含有主要由无机成分组成的化合物的粘附性无机溶胶溶液赋予 包括无机纤维集合体的内部的全部和通过气体通过除去过量粘附的无机溶胶溶液。