公开(公告)号：US07800229B2

公开(公告)日：2010-09-21

申请号：US11704950

申请日：2007-02-12

Applicant: Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

Inventor： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

IPC: H01L23/48 ,  H01L23/52

CPC classification number: C25D3/38 ,  C25D5/50 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883

Abstract: An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

Abstract translation: 在包含铜膜的耦合结构中实现了改进的SIV电阻和改进的EM电阻。 半导体器件包括：半导体衬底; 形成在所述半导体衬底上或之上的第二绝缘层; 第二阻挡金属膜，形成在所述第二绝缘膜上，并且能够防止铜扩散到所述第二绝缘膜中; 以及形成在所述第二阻挡金属膜上以与所述第二阻挡金属膜接触并且含有铜和碳的导电膜，其中所述第二导电膜中沿着沉积方向的碳浓度的分布包括第一 峰值和第二高峰。

公开(公告)号：US20070190341A1

公开(公告)日：2007-08-16

申请号：US11704950

申请日：2007-02-12

Applicant: Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

Inventor： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

IPC: C25D5/02 ,  B32B13/04

CPC classification number: C25D3/38 ,  C25D5/50 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883

Abstract: An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

Abstract translation: 在包含铜膜的耦合结构中实现了改进的SIV电阻和改进的EM电阻。 半导体器件包括：半导体衬底; 形成在所述半导体衬底上或之上的第二绝缘层; 第二阻挡金属膜，形成在所述第二绝缘膜上，并且能够防止铜扩散到所述第二绝缘膜中; 以及形成在所述第二阻挡金属膜上以与所述第二阻挡金属膜接触并且含有铜和碳的导电膜，其中所述第二导电膜中沿着沉积方向的碳浓度的分布包括第一 峰值和第二高峰。

公开(公告)号：US20080029402A1

公开(公告)日：2008-02-07

申请号：US11882177

申请日：2007-07-31

Applicant: Tetsuya Kurokawa ,  Koji Arita ,  Kaori Noda

Inventor： Tetsuya Kurokawa ,  Koji Arita ,  Kaori Noda

IPC: C25D7/12 ,  C25D17/00

CPC classification number: C25D21/22 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  H01L21/2885

Abstract: An electrochemical processing apparatus is provided, in which a substrate and an anode placed in a chamber are partitioned into a cathode region including the substrate and an anode region including the anode by placing a multi-layered structure of a filtration film and a cation exchange film so that the filtration film is positioned on the substrate side. A plating solution containing additives is introduced into the cathode region, whereby a substrate is plated.

Abstract translation: 提供了一种电化学处理装置，其中通过放置过滤膜和阳离子交换膜的多层结构，将放置在室中的基板和阳极分隔成包括基板的阴极区域和包括阳极的阳极区域 使得过滤膜位于基板侧。 将含有添加剂的镀液引入阴极区域，由此镀敷基板。