公开(公告)号：US20130112943A1

公开(公告)日：2013-05-09

申请号：US13595755

申请日：2012-08-27

Applicant: Akira TANAKA ,  Yoko MOTOJIMA

Inventor： Akira TANAKA ,  Yoko MOTOJIMA

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/38 ,  H01L2224/13

Abstract: According to one embodiment, in a semiconductor light emitting device, a light emitting layer is partially provided on a first semiconductor layer of a first conductivity type, and has a multiple quantum well structure made by alternately laminating well layers having a first impurity concentration of the first conductivity type and barrier layers having a second impurity concentration of the first conductivity type higher than the first impurity concentration. A second semiconductor layer of a second conductivity type is provided on the light emitting layer, and has a single composition and uniform bandgap. A first distance between a first electrode provided on the first semiconductor layer and a second electrode provided on the second semiconductor layer in a direction parallel to the light emitting layer is larger than a second distance between the first electrode and the second electrode in a direction perpendicular to the light emitting layer.

Abstract translation: 根据一个实施例，在半导体发光器件中，发光层部分地设置在第一导电类型的第一半导体层上，并且具有通过交替层叠具有第一导电类型的第一杂质浓度的阱层而制成的多量子阱结构 第一导电类型和阻挡层，其具有高于第一杂质浓度的第一导电类型的第二杂质浓度。 第二导电类型的第二半导体层设置在发光层上，具有单一的组成和均匀的带隙。 设置在第一半导体层上的第一电极和设置在第二半导体层上的平行于发光层的方向上的第二电极之间的第一距离大于第一电极和第二电极之间的垂直方向上的第二距离 到发光层。

公开(公告)号：US20120326117A1

公开(公告)日：2012-12-27

申请号：US13399535

申请日：2012-02-17

Applicant: Akira TANAKA ,  Yoko MOTOJIMA

Inventor： Akira TANAKA ,  Yoko MOTOJIMA

IPC: H01L33/04 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L2933/0016

Abstract: According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout unit formed at an end side and an indentation unit extending from the cutout unit in a first direction toward the other end side and branching or bending in a second direction substantially perpendicular to the first direction as well as bending or branching in a direction opposite to the second direction. A transparent conductive film is formed on the semiconductor laminated body and has a second sheet resistance less than the first sheet resistance. A first thin wire electrode is formed along the indentation unit. A second thin wire electrode is formed on the transparent conductive film.

Abstract translation: 根据一个实施例，在半导体发光器件中，通过层压具有第一薄层电阻的第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层来制造半导体层叠体 并且包括形成在端侧的切口单元和从所述切口单元沿着第一方向朝向另一端侧延伸的凹口单元，并且在基本上垂直于所述第一方向的第二方向上分支或弯曲以及在第一方向上弯曲或分支 方向与第二方向相反。 在半导体层叠体上形成透明导电膜，并且具有小于第一薄层电阻的第二薄层电阻。 沿着压痕单元形成第一细线电极。 在透明导电膜上形成第二细线电极。