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    Nitride semiconductor device and method for manufacturing same
    3.
    发明授权
    Nitride semiconductor device and method for manufacturing same 失效
    氮化物半导体器件及其制造方法

    公开(公告)号：US08759878B2

    公开(公告)日：2014-06-24

    申请号：US13238684

    申请日：2011-09-21

    申请人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

    摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。 第一，第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。

    Nitride semiconductor device
    4.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US08664696B2

    公开(公告)日：2014-03-04

    申请号：US13052881

    申请日：2011-03-21

    申请人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    发明人： Akira Yoshioka ,  Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778

    CPC分类号： H01L29/7783 ,  H01L21/28264 ,  H01L21/743 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/78

    摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。 在基板上设置由第一导电类型的氮化物半导体制成的第一层。 由第二导电类型的氮化物半导体制成的第二层设置在第一层上。 在第二层上设置由氮化物半导体构成的第三层。 第一电极与第二层电连接。 第二电极设置在与第一电极相距一定距离处并与第二层电连接。 控制电极经由绝缘膜设置在第一沟槽内。 第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。

    Nitride semiconductor device
    5.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US08581301B2

    公开(公告)日：2013-11-12

    申请号：US13599951

    申请日：2012-08-30

    申请人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno ,  Toshiyuki Naka

    发明人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno ,  Toshiyuki Naka

    IPC分类号： H01L29/10

    CPC分类号： H01L27/0727 ,  H01L21/8252 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/7786 ,  H01L29/872 ,  H01L2924/0002 ,  H02M3/155 ,  H02M3/33569 ,  H02M2001/007 ,  H01L2924/00

    摘要： According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode.

    摘要翻译： 根据一个实施例，氮化物半导体器件具有导电衬底，第一氮化物半导体层，直接设置在导电衬底上，或通过缓冲层设置在导电衬底上，并由非​​掺杂氮化物半导体形成，第二氮化物半导体层 设置在所述第一氮化物半导体层上并且由具有比所述第一氮化物半导体层宽的带隙的非掺杂或n型氮化物半导体形成的异质结场效应晶体管具有源电极，漏电极和 栅电极，具有阳极电极和阴极电极的肖特基势垒二极管，第一和第二元件隔离绝缘层以及框架电极。 框电极电连接到源电极和导电衬底，并且包围异质结场效应晶体管和肖特基势垒二极管的外周。

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    氮化物半导体器件及其制造方法

    公开(公告)号：US20120241751A1

    公开(公告)日：2012-09-27

    申请号：US13238666

    申请日：2011-09-21

    申请人： Akira YOSHIOKA ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito ,  Toru Sugiyama

    发明人： Akira YOSHIOKA ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito ,  Toru Sugiyama

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L29/7787 ,  H01L23/3171 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体层，第二半导体层，第一电极，第二电极，第三电极，第一绝缘膜和第二绝缘膜。 第一半导体层包括氮化物半导体。 第二半导体层设置在第一层上，包括氮化物半导体，并且包括孔。 第一电极设置在孔中。 第二电极设置在第二层上。 第三电极设置在第二层上，使得第一电极设置在第三和第二电极之间。 第一绝缘膜设置在第一电极和孔的内壁之间以及第一和第二电极之间，并且与第三电极间隔设置。 第二绝缘膜设置成与第一和第三电极之间的第二层接触。

    Nitride semiconductor device
    8.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US09082691B2

    公开(公告)日：2015-07-14

    申请号：US13619560

    申请日：2012-09-14

    申请人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    发明人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

    CPC分类号： H01L29/2003 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7787

    摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

    摘要翻译： 氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二 栅电极，互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极，肖特基电极和第二栅电极。

    Nitride semiconductor device
    9.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US08860090B2

    公开(公告)日：2014-10-14

    申请号：US13420559

    申请日：2012-03-14

    申请人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

    发明人： Wataru Saito ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Tetsuya Ohno

    IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

    摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

    摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

    NITRIDE SEMICONDUCTOR DEVICE
    10.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 有权
    氮化物半导体器件

    公开(公告)号：US20130069117A1

    公开(公告)日：2013-03-21

    申请号：US13619560

    申请日：2012-09-14

    申请人： Akira YOSHIOKA ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    发明人： Akira YOSHIOKA ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    IPC分类号： H01L29/778

    CPC分类号： H01L29/2003 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7787

    摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

    摘要翻译： 氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二 栅电极，互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极，肖特基电极和第二栅电极。