公开(公告)号：US11646719B2

公开(公告)日：2023-05-09

申请号：US17886149

申请日：2022-08-11

Applicant: AKOUSTIS, INC.

Inventor： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David M. Aichele

IPC: H03H9/70 ,  H03H9/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05

CPC classification number: H03H9/703 ,  H03H3/02 ,  H03H9/0095 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/205 ,  H03H9/542 ,  H03H9/581 ,  H03H9/605 ,  H03H9/0523 ,  H03H9/0533 ,  H03H2003/023 ,  H03H2003/025

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

公开(公告)号：US10979022B2

公开(公告)日：2021-04-13

申请号：US16019267

申请日：2018-06-26

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David Aichele

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56 ,  H01L41/187 ,  H01L41/047 ,  H01L27/20 ,  H01L41/29 ,  H03H9/00 ,  H03H9/58 ,  H03H3/02 ,  H01L41/332

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11637545B2

公开(公告)日：2023-04-25

申请号：US17886171

申请日：2022-08-11

Applicant: AKOUSTIS, INC.

Inventor： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David M. Aichele

IPC: H03H9/70 ,  H03H9/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.490 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.