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公开(公告)号：US20240322786A1
公开(公告)日：2024-09-26
申请号：US18189388
申请日：2023-03-24
CPC分类号： H03H9/1042 , H03H3/02 , H03H9/02133 , H03H9/0523 , H03H9/0533 , H03H9/0547
摘要： A semiconductor package comprises a leadframe having a die attach pad and one or more leads and a semiconductor die electrically connected to the die attach pad. A BAW device is attached to the semiconductor die. A mold compound surrounds the first semiconductor die and covers portions of the leadframe and a first portion of a top surface of the semiconductor die. The mold compound has a cavity area. The mold compound does not cover the BAW device or a second portion of the top surface of the semiconductor die in the cavity area. A glob top material is disposed within the cavity area. The glob top material covers the BAW device and the second portion of the top of the semiconductor die.
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公开(公告)号：US20240162875A1
公开(公告)日：2024-05-16
申请号：US18542915
申请日：2023-12-18
发明人： Weiwei HU
CPC分类号： H03H3/02 , H03H9/0523 , H03H9/105 , H03H9/173 , H03H2003/021
摘要： A method for fabricating a bulk acoustic wave (BAW) resonator includes forming a top electrode layer, a piezoelectric layer, and a bottom electrode layer above a bottom substrate, forming a first pad metal layer that contacts the top electrode, forming a second pad metal layer that contacts the bottom electrode, forming a bond contacting layer that partially covers each one of the first pad metal layer and the second pad metal layer, forming a top bonding layer on a cap wafer, and bonding the cap wafer onto the piezoelectric layer via the bond contacting layer and the bonding layer.
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公开(公告)号：US20230396230A1
公开(公告)日：2023-12-07
申请号：US18454034
申请日：2023-08-22
发明人： Anindya PODDAR , Hau NGUYEN , Masamitsu MATSUURA
CPC分类号： H03H9/02133 , H03H9/02102 , H03H9/02448 , H03H9/0523 , H03H9/0533 , H03H9/0547 , H03H9/1057 , H03H9/17 , H03H9/2426 , H03H9/2457 , H03H3/0073 , H03H3/04 , H03H9/1021 , H03H2003/0407
摘要： In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.
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4.发明公开公开(公告)号：US20230163743A1
公开(公告)日：2023-05-25
申请号：US18157881
申请日：2023-01-23
申请人： Akoustis, Inc.
发明人： Jeffrey B. Shealy , Mary Winters , Craig Moe
IPC分类号： H03H3/02 , H03H9/13 , H03H9/17 , H03H9/10 , H03H9/05 , H03H9/02 , H03H9/54 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/85 , H10N30/086 , H10N30/88 , H10N30/87 , H10N30/00
CPC分类号： H03H3/02 , H03H9/13 , H03H9/105 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/0523 , H03H9/547 , H03H9/02015 , H03H9/02118 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/85 , H10N30/086 , H10N30/88 , H10N30/875 , H10N30/877 , H10N30/10513 , H03H2003/021 , H03H2003/025 , H10N30/072 , Y10T29/42
摘要： An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.
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公开(公告)号：US20190253038A1
公开(公告)日：2019-08-15
申请号：US16391191
申请日：2019-04-22
申请人： Akoustis, Inc.
CPC分类号： H03H9/703 , H03H3/02 , H03H9/0095 , H03H9/02031 , H03H9/02118 , H03H9/0523 , H03H9/0533 , H03H9/1014 , H03H9/205 , H03H9/542 , H03H9/581 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/027
摘要： An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.
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公开(公告)号：US20180309425A1
公开(公告)日：2018-10-25
申请号：US16020635
申请日：2018-06-27
申请人： Akoustis, Inc.
CPC分类号： H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/173 , H03H9/175 , H03H9/54 , H03H2003/021 , H03H2003/025
摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.
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公开(公告)号：US20180159503A1
公开(公告)日：2018-06-07
申请号：US15828637
申请日：2017-12-01
发明人： Atsushi Takano
IPC分类号： H03H9/10 , H03H3/02 , H03H9/17 , H03H9/05 , H01L41/313 , H01L41/337 , H01L41/338 , H01L23/00
CPC分类号： H03H9/1035 , B23K1/0016 , B23K20/16 , B23K26/382 , B23K26/402 , B23K2101/36 , B23K2101/42 , B23K2103/172 , H01L21/187 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L41/313 , H01L41/337 , H01L41/338 , H01L2224/83096 , H01L2224/8312 , H01L2224/83825 , H01L2924/01029 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H03H3/02 , H03H9/0523 , H03H9/17 , H03H9/171 , H03H9/173 , H03H9/175 , H03H9/706 , H03H2003/021
摘要： An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.
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公开(公告)号：US20180159499A1
公开(公告)日：2018-06-07
申请号：US15803699
申请日：2017-11-03
发明人： Hidetaro NAKAZAWA , Takashi MATSUDA
CPC分类号： H03H9/02834 , H03H9/02102 , H03H9/02535 , H03H9/0523 , H03H9/0571 , H03H9/0576 , H03H9/059 , H03H9/1042 , H03H9/1085 , H03H9/72 , H05K1/0203 , H05K1/0209 , H05K1/0243 , H05K2201/1006 , H05K2201/10068 , H05K2201/10083 , H05K2201/10568 , H05K2201/10575 , H05K2203/1327
摘要： An electronic component includes: a first substrate; a second substrate that includes a functional element formed on a lower surface of the second substrate, the second substrate being mounted on the first substrate so that the functional element faces an upper surface of the first substrate across an air gap; and an insulating film that is located on the upper surface of the first substrate, overlaps with at least a part of the functional element in plan view, faces the functional element across the air gap, and has a film thickness that is more than half of a distance between a lower surface of the functional element and the upper surface of the first substrate.
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公开(公告)号：US20180151794A1
公开(公告)日：2018-05-31
申请号：US15697812
申请日：2017-09-07
发明人： Takuma KUROYANAGI
IPC分类号： H01L41/047 , H01L41/25
CPC分类号： H01L41/0475 , H01L41/25 , H01L2224/16225 , H01L2224/97 , H01L2924/3511 , H03H3/02 , H03H3/08 , H03H9/0523 , H03H9/0547 , H03H9/059
摘要： An electronic component includes: a first substrate; a second substrate mounted on the first substrate so that a lower surface of the second substrate faces an upper surface of the first substrate across an air gap; a bump that bonds the upper surface of the first substrate and the lower surface of the second substrate and electrically connects the first substrate and the second substrate; a terminal located on the lower surface of the first substrate; and a via wiring that penetrates through the first substrate and at least a part of the bump and electrically connects the bump and the terminal.
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公开(公告)号：US20180145652A1
公开(公告)日：2018-05-24
申请号：US15874815
申请日：2018-01-18
申请人： Akoustis, Inc.
发明人： Jeffrey B. SHEALY
CPC分类号： H03H3/02 , H03H9/02031 , H03H9/0523 , H03H9/174 , H03H2003/023
摘要： A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.
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