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公开(公告)号：US20230344399A1
公开(公告)日：2023-10-26
申请号：US18342623
申请日：2023-06-27
申请人： Akoustis, Inc.
发明人： Ramakrishna VETURY , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
CPC分类号： H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/132 , H03H9/568 , H03H3/04 , H03H9/131 , H03H9/133 , H03H9/171 , H03H9/564 , H03H9/174 , H03H2003/0428 , H03H2003/0414
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US11677372B2
公开(公告)日：2023-06-13
申请号：US17230729
申请日：2021-04-14
申请人： Akoustis, Inc.
发明人： Dae Ho Kim , Frank Zhiquang Bi , Mary Winters , Abhay Saranswarup Kochhar , Emad Mehdizadeh , Rohan W. Houlden , Jeffrey B. Shealy
IPC分类号： H03H3/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H10N30/87 , H10N30/88 , H10N30/00 , H10N30/85 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H03H9/02 , H01L41/047 , H01L41/053 , H01L41/08 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337
CPC分类号： H03H3/02 , H01L41/0475 , H01L41/0477 , H01L41/053 , H01L41/081 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H03H2003/021 , H03H2003/025 , Y10T29/42
摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.
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3.发明授权公开(公告)号：US11671067B2
公开(公告)日：2023-06-06
申请号：US16822689
申请日：2020-03-18
申请人： Akoustis, Inc.
IPC分类号： H01L41/047 , H03H3/02 , H03H9/02 , H03H9/13 , H03H9/17 , H03H9/10 , H03H9/05 , H01L41/337 , H01L41/317 , H01L41/29 , H01L41/23 , H01L41/18 , H01L41/08 , H01L41/053 , H03H9/54 , H01L41/312
CPC分类号： H03H3/02 , H01L41/0475 , H01L41/0477 , H01L41/053 , H01L41/081 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H01L41/0805 , H01L41/312 , H03H2003/021 , H03H2003/025 , Y10T29/42
摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.
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公开(公告)号：US11652469B2
公开(公告)日：2023-05-16
申请号：US16552999
申请日：2019-08-27
申请人： Akoustis, Inc.
CPC分类号： H03H9/54 , H03H3/02 , H03H9/02007 , H03H9/125 , H03H9/17
摘要： An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.
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公开(公告)号：US20230114606A1
公开(公告)日：2023-04-13
申请号：US18063003
申请日：2022-12-07
申请人： Akoustis, Inc.
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17 , H01L41/337 , H01L41/317 , H01L41/29 , H01L41/23 , H01L41/18 , H01L41/08 , H01L41/053 , H01L41/047 , H03H9/54 , H03H9/13 , H03H9/10 , H03H9/05
摘要： A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.
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公开(公告)号：US11581306B2
公开(公告)日：2023-02-14
申请号：US17180174
申请日：2021-02-19
申请人： Akoustis, Inc.
IPC分类号： H01L27/06 , H01L21/02 , H01L21/8252 , H01L27/20 , H01L29/20 , H01L29/417 , H01L29/80 , H03F3/19 , H03F3/21 , H03H3/08 , H03H9/46 , H04B1/44 , H01L41/18 , H01L41/314 , H01L41/37 , H03H9/02 , H01L29/778 , H03H3/02 , H01L23/66 , H03H9/05 , H03H9/10
摘要： A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.
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公开(公告)号：US11563412B2
公开(公告)日：2023-01-24
申请号：US17171756
申请日：2021-02-09
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20220416756A1
公开(公告)日：2022-12-29
申请号：US17527866
申请日：2021-11-16
申请人： Akoustis,Inc.
摘要： A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.
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公开(公告)号：US11165404B2
公开(公告)日：2021-11-02
申请号：US16136158
申请日：2018-09-19
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
IPC分类号： H04R17/00 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/56 , H03H3/04 , H03H9/17
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20210184641A1
公开(公告)日：2021-06-17
申请号：US17171756
申请日：2021-02-09
申请人： Akoustis, Inc.
发明人： Ramakrishna Vetury , Alexander Y. Feldman , Michael D. Hodge , Art Geiss , Shawn R. Gibb , Mark D. Boomgarden , Michael P. Lewis , Pinal Patel , Jeffrey B. Shealy
摘要： A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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