公开(公告)号：US20200169237A1

公开(公告)日：2020-05-28

申请号：US16776253

申请日：2020-01-29

Applicant: Akoustis, Inc.

Inventor： Shawn R. GIBB ,  Alexander Y. FELDMAN ,  Mark D. BOOMGARDEN ,  Michael P. LEWIS ,  Ramakrishna VETURY ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/10 ,  H01L41/22

Abstract: A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

公开(公告)号：US20190312027A1

公开(公告)日：2019-10-10

申请号：US15405167

申请日：2017-01-12

Applicant: Akoustis, Inc.

Inventor： Shawn R. GIBB ,  David AICHELE ,  Ramakrishna VETURY ,  Mark D. BOOMGARDEN ,  Jeffrey B. SHEALY

IPC: H01L27/06 ,  H01L21/02 ,  H01L29/20 ,  H03H3/08 ,  H03H9/46 ,  H03F3/19 ,  H04B1/44 ,  H03F3/21 ,  H01L29/417 ,  H01L29/80 ,  H01L21/8252 ,  H01L27/20

Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

公开(公告)号：US20180342999A1

公开(公告)日：2018-11-29

申请号：US16035577

申请日：2018-07-13

Applicant: Akoustis, Inc.

Inventor： Shawn R. GIBB ,  Craig MOE ,  Jeff LEATHERSICH ,  Steven DENBAARS ,  Jeffrey B. SHEALY

IPC: H03H9/56 ,  H03H9/17 ,  H03H9/05 ,  H01L41/316 ,  H01L41/253 ,  H03H3/02

Abstract: A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

公开(公告)号：US20170264256A1

公开(公告)日：2017-09-14

申请号：US15221358

申请日：2016-07-27

Applicant: Akoustis, Inc.

Inventor： Shawn R. GIBB ,  Alexander Y. FELDMAN ,  Mark D. BOOMGARDEN ,  Michael P. LEWIS ,  Ramakrishna VETURY ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/17

Abstract: A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

公开(公告)号：US20230123976A1

公开(公告)日：2023-04-20

申请号：US18066160

申请日：2022-12-14

Applicant: Akoustis, Inc.

Inventor： Shawn R. GIBB ,  Steven DENBAARS ,  Jeffrey B. SHEALY

IPC: H10N30/079 ,  H10N30/00 ,  H10N30/85 ,  H10N30/076 ,  C30B25/18 ,  C30B23/02 ,  C30B31/06 ,  C30B29/40

Abstract: A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

公开(公告)号：US20200274607A1

公开(公告)日：2020-08-27

申请号：US15931413

申请日：2020-05-13

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY ,  Rohan W. HOULDEN ,  Shawn R. GIBB ,  David M. AICHELE

IPC: H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72

Abstract: A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.2 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.2 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.2 GHz PA, a 5.2 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US20190036504A1

公开(公告)日：2019-01-31

申请号：US16134941

申请日：2018-09-18

Applicant: Akoustis, Inc.

Inventor： Ramakrishna VETURY ,  Alexander Y. FELDMAN ,  Michael D. HODGE ,  Art GEISS ,  Shawn R. GIBB ,  Mark D. BOOMGARDEN ,  Michael P. LEWIS ,  Pinal PATEL ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/17

Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US20220021364A1

公开(公告)日：2022-01-20

申请号：US17490733

申请日：2021-09-30

Applicant: Akoustis, Inc.

Inventor： Ramakrishna VETURY ,  Alexander Y. FELDMAN ,  Michael D. HODGE ,  Art GEISS ,  Shawn R. GIBB ,  Mark D. BOOMGARDEN ,  Michael P. LEWIS ,  Pinal PATEL ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/56 ,  H03H3/04 ,  H03H9/17

Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US20200067486A1

公开(公告)日：2020-02-27

申请号：US16552999

申请日：2019-08-27

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY ,  Shawn R. GIBB ,  Rohan W. HOULDEN ,  Joel M. MORGAN

IPC: H03H9/54 ,  H03H9/17 ,  H03H9/02 ,  H03H9/125 ,  H03H3/02

Abstract: An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

公开(公告)号：US20190372555A1

公开(公告)日：2019-12-05

申请号：US15996358

申请日：2018-06-01

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY ,  Shawn R. GIBB

IPC: H03H9/70 ,  H03H3/04 ,  H03H9/02

Abstract: In an array of single crystal acoustic resonators, the effective coupling coefficient of first and second strained single crystal filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. The coefficients can be tailored by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers or by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Further, a strained piezoelectric layer can be formed overlying a nucleation layer characterized by nucleation growth parameters, which can be configured to modulate a strain condition in the strained piezoelectric layer to adjust piezoelectric properties for improved performance in specific applications.