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公开(公告)号：US20210111695A1
公开(公告)日：2021-04-15
申请号：US17106736
申请日：2020-11-30
Applicant: Akoustis, Inc.
Inventor： Dae Ho KIM , Pinal PATEL , Rohan W. HOULDEN , James Blanton SHEALY , Jeffrey B. SHEALY
Abstract: An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.
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公开(公告)号：US20180123542A1
公开(公告)日：2018-05-03
申请号：US15341218
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20220021364A1
公开(公告)日：2022-01-20
申请号：US17490733
申请日：2021-09-30
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20210104993A1
公开(公告)日：2021-04-08
申请号：US17102060
申请日：2020-11-23
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Dae Ho KIM , Mary WINTERS , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20180123540A1
公开(公告)日：2018-05-03
申请号：US15342049
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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Patent Agency Ranking
公开(公告)号：US20190020325A1
公开(公告)日：2019-01-17
申请号：US16136158
申请日：2018-09-19
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20180123541A1
公开(公告)日：2018-05-03
申请号：US15342061
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20200336125A1
公开(公告)日：2020-10-22
申请号：US16389818
申请日：2019-04-19
Applicant: Akoustis, Inc.
Inventor： Zhiqiang BI , Dae Ho KIM , Pinal PATEL , Kathy W. DAVIS , Rohan W. HOULDEN
Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.
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公开(公告)号：US20190044493A1
公开(公告)日：2019-02-07
申请号：US16054929
申请日：2018-08-03
Applicant: Akoustis, Inc.
Inventor： Dae Ho KIM , Pinal PATEL , Rohan W. HOULDEN , James Blanton SHEALY , Jeffrey B. SHEALY
Abstract: An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.
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公开(公告)号：US20190036504A1
公开(公告)日：2019-01-31
申请号：US16134941
申请日：2018-09-18
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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