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公开(公告)号：US20180123542A1
公开(公告)日：2018-05-03
申请号：US15341218
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20200169237A1
公开(公告)日：2020-05-28
申请号：US16776253
申请日：2020-01-29
Applicant: Akoustis, Inc.
Inventor： Shawn R. GIBB , Alexander Y. FELDMAN , Mark D. BOOMGARDEN , Michael P. LEWIS , Ramakrishna VETURY , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.
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公开(公告)号：US20170264256A1
公开(公告)日：2017-09-14
申请号：US15221358
申请日：2016-07-27
Applicant: Akoustis, Inc.
Inventor： Shawn R. GIBB , Alexander Y. FELDMAN , Mark D. BOOMGARDEN , Michael P. LEWIS , Ramakrishna VETURY , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.
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公开(公告)号：US20190020325A1
公开(公告)日：2019-01-17
申请号：US16136158
申请日：2018-09-19
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20180123541A1
公开(公告)日：2018-05-03
申请号：US15342061
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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Patent Agency Ranking
公开(公告)号：US20190036504A1
公开(公告)日：2019-01-31
申请号：US16134941
申请日：2018-09-18
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20220021364A1
公开(公告)日：2022-01-20
申请号：US17490733
申请日：2021-09-30
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20210104993A1
公开(公告)日：2021-04-08
申请号：US17102060
申请日：2020-11-23
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Dae Ho KIM , Mary WINTERS , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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公开(公告)号：US20190148621A1
公开(公告)日：2019-05-16
申请号：US16244996
申请日：2019-01-10
Applicant: Akoustis, Inc.
Inventor： Alexander Y. FELDMAN , Mark D. BOOMGARDEN , Michael P. LEWIS , Jeffrey B. SHEALY , Ramakrishna VETURY
IPC: H01L41/29 , H03H9/02 , H03H3/02 , H01L41/047 , H01L41/332
Abstract: A method of manufacture for an acoustic resonator device. The method can include forming a topside metal electrode overlying a piezoelectric substrate with a piezoelectric layer and a seed substrate. A topside micro-trench can be formed within the piezoelectric layer and a topside metal can be formed overlying the topside micro-trench. This topside metal can include a topside metal plug formed within the topside micro-trench. A first backside trench can be formed underlying the topside metal electrode, and a second backside trench can be formed underlying the topside micro-trench. A backside metal electrode can be formed within the first backside trench, while a backside metal plug can be formed within the second backside trench and electrically coupled to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via.
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公开(公告)号：US20180123540A1
公开(公告)日：2018-05-03
申请号：US15342049
申请日：2016-11-02
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
CPC classification number: H03H3/04 , H03H3/02 , H03H9/02118 , H03H9/0514 , H03H9/1035 , H03H9/131 , H03H9/132 , H03H9/133 , H03H9/171 , H03H9/174 , H03H9/564 , H03H9/568 , H03H2003/0414 , H03H2003/0428
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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