公开(公告)号：US08058044B2

公开(公告)日：2011-11-15

申请号：US12242428

申请日：2008-09-30

申请人： Alan R. Craig ,  Steve Kramer ,  Ashok Koul

发明人： Alan R. Craig ,  Steve Kramer ,  Ashok Koul

IPC分类号： C12N11/00 ,  C07C309/14 ,  C07K1/06 ,  C07K16/46 ,  C07K17/00 ,  C12P21/08

CPC分类号： C07K19/00

摘要： In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.

摘要翻译： 在一些实施方案中，本发明涉及将第一化合物与第二化合物缀合的方法，其中缀合涉及亲电部分。 该方法包括使第一化合物与第二化合物反应以形成缀合物。 本发明实施方案的改进包括向缀合物中加入亲核试剂，其中亲核试剂与缀合物的未反应的亲电子部分反应时形成中性产物。 在一些实施方案中，在缀合物包含二硫键的情况下，亲核试剂基本上不与二硫键反应。 形成的缀合物是双失活的，因为用于连接到亲电子部分的其它部分也失活。

公开(公告)号：US07456000B2

公开(公告)日：2008-11-25

申请号：US11198535

申请日：2005-08-05

申请人： Alan R. Craig ,  Steve Kramer ,  Ashok Koul

发明人： Alan R. Craig ,  Steve Kramer ,  Ashok Koul

IPC分类号： C07K1/00 ,  C07K14/00

CPC分类号： C07K19/00

摘要： In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.

摘要翻译： 在一些实施方案中，本发明涉及将第一化合物与第二化合物缀合的方法，其中缀合涉及亲电部分。 该方法包括使第一化合物与第二化合物反应以形成缀合物。 本发明实施方案的改进包括向缀合物中加入亲核试剂，其中亲核试剂与缀合物的未反应的亲电子部分反应时形成中性产物。 在一些实施方案中，在缀合物包含二硫键的情况下，亲核试剂基本上不与二硫键反应。 形成的缀合物是双失活的，因为用于连接到亲电子部分的其它部分也失活。

公开(公告)号：US20090029435A1

公开(公告)日：2009-01-29

申请号：US12242428

申请日：2008-09-30

申请人： Alan R. Craig ,  Steve Kramer ,  Ashok Koul

发明人： Alan R. Craig ,  Steve Kramer ,  Ashok Koul

IPC分类号： C12N11/00

CPC分类号： C07K19/00

摘要： In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.

摘要翻译： 在一些实施方案中，本发明涉及将第一化合物与第二化合物缀合的方法，其中缀合涉及亲电部分。 该方法包括使第一化合物与第二化合物反应以形成缀合物。 本发明实施方案的改进包括向缀合物中加入亲核试剂，其中亲核试剂与缀合物的未反应的亲电子部分反应时形成中性产物。 在一些实施方案中，在缀合物包含二硫键的情况下，亲核试剂基本上不与二硫键反应。 形成的缀合物是双失活的，因为用于连接到亲电子部分的其它部分也失活。

公开(公告)号：US20060046290A1

公开(公告)日：2006-03-02

申请号：US11198535

申请日：2005-08-04

申请人： Alan Craig ,  Steve Kramer ,  Ashok Koul

发明人： Alan Craig ,  Steve Kramer ,  Ashok Koul

IPC分类号： A61K39/395 ,  C12N9/00

CPC分类号： C07K19/00

摘要： In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.

摘要翻译： 在一些实施方案中，本发明涉及将第一化合物与第二化合物缀合的方法，其中缀合涉及亲电部分。 该方法包括使第一化合物与第二化合物反应以形成缀合物。 本发明实施方案的改进包括向缀合物中加入亲核试剂，其中亲核试剂与缀合物的未反应的亲电子部分反应时形成中性产物。 在一些实施方案中，在缀合物包含二硫键的情况下，亲核试剂基本上不与二硫键反应。 形成的缀合物是双失活的，因为用于连接到亲电子部分的其它部分也失活。

公开(公告)号：US08114573B2

公开(公告)日：2012-02-14

申请号：US12757327

申请日：2010-04-09

申请人： Gurtej S. Sandhu ,  Steve Kramer

发明人： Gurtej S. Sandhu ,  Steve Kramer

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088

摘要： A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer. Block species are subsequently selectively removed to form a pattern of voids defined by the remaining block species, which form a mask that can be used to pattern an underlying substrate. The supplemental copolymers augment the height of the copolymers in the seed layer, thereby facilitating the use of the copolymers for patterning the underlying substrate.

摘要翻译： 在部分制造的集成电路上形成具有由诸如二嵌段共聚物之类的自组织材料形成的特征的掩模。 最初，在部分制造的集成电路的表面上形成共聚物模板或种子层。 为了形成种子层，由共混物对准引导件之间的空间中沉积由两个不混溶的嵌段组成的二嵌段共聚物。 使共聚物自组织，引导引导自组织，每个块与相同类型的其它嵌段聚集，从而形成种子层。 接下来，在种子层上沉积另外的补充二嵌段共聚物。 种子层中的共聚物引导辅助共聚物的自组织，从而在种子层中垂直延伸由共聚物形成的图案。 随后选择性地去除块物质以形成由剩余的嵌段物质限定的空隙图案，其形成可用于对下面的基底进行图案化的掩模。 补充共聚物增加了种子层中共聚物的高度，从而有利于共聚物用于图案化下面的底物。

公开(公告)号：US07897517B2

公开(公告)日：2011-03-01

申请号：US12533543

申请日：2009-07-31

申请人： Chien M. Wai ,  Hiroyuki Ohde ,  Steve Kramer

发明人： Chien M. Wai ,  Hiroyuki Ohde ,  Steve Kramer

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/288 ,  H01L21/76879 ,  Y10S257/914

摘要： A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.

摘要翻译： 一种用于在衬底上沉积一种或多种材料的方法，例如包括提供衬底的半导体衬底; 将聚合物膜施加到所述基底的表面的至少一部分; 以及将所述半导体衬底暴露于含有至少一种反应物的超临界流体足以使所述超临界流体膨胀所述聚合物并且所述至少一种反应物渗透所述聚合物膜的时间。 反应物反应以使材料沉积在基材的至少一部分上。 从超临界流体中除去基材，除去聚合物膜。 该过程允许材料的精确沉积，而不需要使用化学，物理或化学和物理去除技术的组合去除多余的材料。

公开(公告)号：US07400043B2

公开(公告)日：2008-07-15

申请号：US11377054

申请日：2006-03-16

申请人： Chien M. Wai ,  Hiroyuki Ohde ,  Steve Kramer

发明人： Chien M. Wai ,  Hiroyuki Ohde ,  Steve Kramer

IPC分类号： H01L21/00

CPC分类号： H01L21/76877 ,  C23C18/48 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76838 ,  H01L23/4827 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.

摘要翻译： 本发明包括在半导体衬底的表面上形成含金属膜的方法。 表面暴露于超临界流体。 超临界流体具有H 2 O 2，至少一种H 2 - 2 - 活化催化剂和分散在其中的至少一种含金属前体。 由至少一种含金属的前体的金属在半导体衬底的表面上形成含金属的膜。 本发明还包括具有包含铜，钴，金和镍中的一种或多种的含金属层的半导体结构，其与钯，铂，铱，铑和钌中的一种或多种组合。

公开(公告)号：US20080136028A1

公开(公告)日：2008-06-12

申请号：US10280546

申请日：2002-10-25

申请人： Chien M. Wai ,  Hiroyuki Ohde ,  Steve Kramer

发明人： Chien M. Wai ,  Hiroyuki Ohde ,  Steve Kramer

IPC分类号： H01L23/52

CPC分类号： H01L23/4827 ,  C23C18/48 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76838 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.

摘要翻译： 本发明包括在半导体衬底的表面上形成含金属膜的方法。 表面暴露于超临界流体。 超临界流体具有H 2 O 2，至少一种H 2 - 2 - 活化催化剂和分散在其中的至少一种含金属前体。 由至少一种含金属的前体的金属在半导体衬底的表面上形成含金属的膜。 本发明还包括具有包含铜，钴，金和镍中的一种或多种的含金属层的半导体结构，其与钯，铂，铱，铑和钌中的一种或多种组合。

公开(公告)号：US20100190114A1

公开(公告)日：2010-07-29

申请号：US12757327

申请日：2010-04-09

申请人： Gurtej S. Sandhu ,  Steve Kramer

发明人： Gurtej S. Sandhu ,  Steve Kramer

IPC分类号： G03F7/20

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088

摘要： A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer. Block species are subsequently selectively removed to form a pattern of voids defined by the remaining block species, which form a mask that can be used to pattern an underlying substrate. The supplemental copolymers augment the height of the copolymers in the seed layer, thereby facilitating the use of the copolymers for patterning the underlying substrate.

摘要翻译： 在部分制造的集成电路上形成具有由诸如二嵌段共聚物之类的自组织材料形成的特征的掩模。 最初，在部分制造的集成电路的表面上形成共聚物模板或种子层。 为了形成种子层，由共混物对准引导件之间的空间中沉积由两个不混溶的嵌段组成的二嵌段共聚物。 使共聚物自组织，引导引导自组织，每个块与相同类型的其它嵌段聚集，从而形成种子层。 接下来，在种子层上沉积另外的补充二嵌段共聚物。 种子层中的共聚物引导辅助共聚物的自组织，从而在种子层中垂直延伸由共聚物形成的图案。 随后选择性地去除块物质以形成由剩余的嵌段物质限定的空隙图案，其形成可用于对下面的基底进行图案化的掩模。 补充共聚物增加了种子层中共聚物的高度，从而有利于共聚物用于图案化下面的底物。

公开(公告)号：US07723009B2

公开(公告)日：2010-05-25

申请号：US11445907

申请日：2006-06-02

申请人： Gurtej S. Sandhu ,  Steve Kramer

发明人： Gurtej S. Sandhu ,  Steve Kramer

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088

摘要： A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer. Block species are subsequently selectively removed to form a pattern of voids defined by the remaining block species, which form a mask that can be used to pattern an underlying substrate. The supplemental copolymers augment the height of the copolymers in the seed layer, thereby facilitating the use of the copolymers for patterning the underlying substrate.

摘要翻译： 在部分制造的集成电路上形成具有由诸如二嵌段共聚物之类的自组织材料形成的特征的掩模。 最初，在部分制造的集成电路的表面上形成共聚物模板或种子层。 为了形成种子层，由共混物对准引导件之间的空间中沉积由两个不混溶的嵌段组成的二嵌段共聚物。 使共聚物自组织，引导引导自组织，每个块与相同类型的其它嵌段聚集，从而形成种子层。 接下来，在种子层上沉积另外的补充二嵌段共聚物。 种子层中的共聚物引导辅助共聚物的自组织，从而在种子层中垂直延伸由共聚物形成的图案。 随后选择性地去除块物质以形成由剩余的嵌段物质限定的空隙图案，其形成可用于对下面的基底进行图案化的掩模。 补充共聚物增加了种子层中共聚物的高度，从而有利于共聚物用于图案化下面的底物。