Abstract:
A multi-later memory and method for operation is disclosed. The memory includes at least one flash memory die having multiple layers and a controller configured to execute block reclaim operations in a layer of the flash memory die until a net gain of at least one additional free block has been made in the layer. The method may include relocating data from reclaim blocks to relocation blocks within the same layer, or within a same partition in the same layer until a net gain of one free block has been achieved and an integer number of relocation blocks has been filled with relocated data. The method may also include moving data from reclaim blocks in a first layer into destination blocks in a second layer until a net gain of at least one free block has been achieved in the first layer.
Abstract:
A multi-layer memory and method for performing background maintenance operations are disclosed. The memory includes a plurality of flash memory die having multiple layers, where each layer is made up of flash memory cells having a greater bit per cell storage capacity than then prior layer and each layer may have a plurality of partitions for different data types. A controller managing the flash memory die is configured to identify an idle die and determine if a layer in the die satisfies a background maintenance criterion. Upon identifying a layer satisfying the background maintenance criterion, the valid data from reclaim blocks in the layer is relocated into a relocation block in the same layer until the relocation block is filled and the background maintenance cycle ends.
Abstract:
A mass storage memory system and method of operation is disclosed. The memory includes an interface adapted to receive data from a host, a plurality of flash memory die and a controller, where the controller is configured to receive a first command and read or write data synchronously across the plurality of die based on a first command, and to receive a second command and read or write data asynchronously and independently in each die based on a second command. The controller may program data in a maximum unit of programming for an individual one of the plurality of flash memory die. The controller may be a plurality of controllers each configured to select which die of an exclusive subset of die to write data based on characteristics of the die in the subset. The plurality of die may be multi-layer, and multi-partition per layer, flash memory die.
Abstract:
A multi-layer memory and method for performing background maintenance operations are disclosed. The memory includes a plurality of flash memory die having multiple layers, where each layer is made up of flash memory cells having a greater bit per cell storage capacity than then prior layer and each layer may have a plurality of partitions for different data types. A controller managing the flash memory die is configured to identify an idle die and determine if a layer in the die satisfies a background maintenance criterion. Upon identifying a layer satisfying the background maintenance criterion, the valid data from reclaim blocks in the layer is relocated into a relocation block in the same layer until the relocation block is filled and the background maintenance cycle ends.
Abstract:
A mass storage memory system and method of operation are disclosed. The memory system includes an interface adapted to receive data from a host system, a plurality of memory die and a controller, where the controller is configured to read or write data synchronously across a plurality of die connected to different channels based on a first command, and to read or write data asynchronously and independently in different die in the same channel based on a second command. The controller may program data in a maximum unit of programming for a single memory die. The controller may be a plurality of controllers each configured to select which die of an exclusive subset of die to write data based on characteristics of the die in the subset. The plurality of die may be multi-layer, and multi-partition per layer, flash memory die.
Abstract:
A flash memory system having unequal number of memory die and method for operation is disclosed. The memory includes a plurality of flash memory die distributed unevenly among different control lines, such that there are an unequal number of die between control lines. A total physical storage capacity of the plurality of flash memory die is greater than a total logical capacity such that the memory system is over provisioned with physical storage capacity. A logical address splitter directs data received from a host system and associated with host logical block addresses such that each control line only receives data associated with predetermined host logical block address ranges and directs the data such that a ratio of physical capacity to logical capacity is equal among each of the control lines, regardless of the different number of die, and associated different physical capacity per control line.
Abstract:
A multi-later memory and method for operation is disclosed. The memory includes three or more layers, where each layer is made up of flash memory cells having a greater bit per cell storage capacity than then prior layer. The method may include the steps of directing host data directly into a first or second layer of the multi-layer memory upon receipt depending on a condition of the data. The method may also include copying data within a respective layer in a data relocation operation to generate more free blocks of memory so that data preferably stays within each layer, as well as transferring data from one layer to the next higher bit per cell layer when layer transfer criteria are met.
Abstract:
A flash memory system having unequal number of memory die and method for operation are disclosed. The memory system includes a plurality of flash memory die distributed unevenly among different control lines, such that there are an unequal number of die between control lines. A total physical capacity of the plurality of flash memory die is greater than a total logical capacity such that the memory system is over provisioned with physical capacity. A logical address splitter directs data received from a host system and associated with host logical block addresses such that each control line only receives data associated with predetermined host logical block address ranges and directs the data such that a ratio of physical capacity to logical capacity is equal among each of the control lines, regardless of the different number of die and associated different physical capacity per control line.
Abstract:
A multi-layer memory and method for operation is disclosed. The memory includes an interface, at least one flash memory die having a plurality of layers and a controller. The controller is configured to select an appropriate one of a predetermined number of program cycles for programming a fixed amount of host data, and for carrying out maintenance operations in one or more of the layers sufficient to permit a next host data write operation. The controller calculates an interleave ratio of maintenance operations to host data programming operations in each of the layers used in the determined programming cycle so that creation of free space is interspersed with host data writes in a steady manner during execution of the determined programming cycle.
Abstract:
A multi-later memory and method for operation is disclosed. The memory includes at least one flash memory die having multiple layers and a controller configured to execute block reclaim operations in a layer of the flash memory die until a net gain of at least one additional free block has been made in the layer. The method may include relocating data from reclaim blocks to relocation blocks within the same layer, or within a same partition in the same layer until a net gain of one free block has been achieved and an integer number of relocation blocks has been filled with relocated data. The method may also include moving data from reclaim blocks in a first layer into destination blocks in a second layer until a net gain of at least one free block has been achieved in the first layer.