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    KEYED WAFER CARRIER
    1.
    发明申请
    KEYED WAFER CARRIER 有权
    键盘拖车

    公开(公告)号：US20130252404A1

    公开(公告)日：2013-09-26

    申请号：US13424821

    申请日：2012-03-20

    申请人： Sandeep Krishnan ,  Keng Moy ,  Alexander I. Gurary ,  Matthew King ,  Vadim Boguslavskiy ,  Steven Krommenhoek

    发明人： Sandeep Krishnan ,  Keng Moy ,  Alexander I. Gurary ,  Matthew King ,  Vadim Boguslavskiy ,  Steven Krommenhoek

    IPC分类号： C23C16/458 ,  H01L21/203

    CPC分类号： C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

    摘要： A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.

    摘要翻译： 化学气相沉积反应器的结构理想地包括具有内部的反应室，安装在反应室中的主轴和可拆卸地安装到主轴上以与其一起旋转的晶片载体。 主轴理想地具有沿着垂直旋转轴线延伸的轴和从轴向外突出的键。 晶片载体优选地具有限定相对面对的顶表面和底表面的主体，并且至少一个晶片保持特征构造成使得晶片可以被保持在其中，晶片的表面暴露在主体的顶表面处。 晶片载体理想地还具有从主体的底表面延伸到主体中的凹槽和沿着第一横向轴线从凹部的周边向外突出的键槽。 轴优选地接合在凹部中，并且键优选地接合到键槽中。

    Methods and systems for in-situ pyrometer calibration
    6.
    发明授权
    Methods and systems for in-situ pyrometer calibration 有权
    用于原位高温计校准的方法和系统

    公开(公告)号：US08888360B2

    公开(公告)日：2014-11-18

    申请号：US13331112

    申请日：2011-12-20

    申请人： Alexander I. Gurary ,  Vadim Boguslavskiy ,  Sandeep Krishnan ,  Matthew King

    发明人： Alexander I. Gurary ,  Vadim Boguslavskiy ,  Sandeep Krishnan ,  Matthew King

    IPC分类号： G01K15/00 ,  G01K13/12 ,  G01K1/00 ,  G01J5/00

    CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048

    摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of positioning a calibrating pyrometer at a first calibrating position and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating the support element about the rotational axis, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer installed at a first operating position, and obtaining first calibrating temperature measurements from the calibration pyrometer. Both the calibrating pyrometer and the first operating pyrometer desirably are adapted to receive radiation from a first portion of a wafer support element at a first radial distance from a rotational axis of the wafer support element.

    摘要翻译： 用于晶片处理反应器如化学气相沉积反应器的原位高温计校准的方法理想地包括以下步骤：将校准高温计放置在第一校准位置并加热反应器直到反应器达到高温计校准温度。 该方法理想地还包括围绕旋转轴线旋转支撑元件，并且当支撑元件围绕旋转轴线旋转时，从安装在第一操作位置的第一操作高温计获得第一操作温度测量值，并获得第一校准温度测量值 校准高温计。 校准高温计和第一操作高温计都期望地适于在离晶片支撑元件的旋转轴线的第一径向距离处接收来自晶片支撑元件的第一部分的辐射。

    METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION
    9.
    发明申请
    METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 有权
    用于原位染色体校准的方法和系统

    公开(公告)号：US20120170609A1

    公开(公告)日：2012-07-05

    申请号：US13331112

    申请日：2011-12-20

    申请人： Alexander I. Gurary ,  Vadim Boguslavskiy ,  Sandeep Krishnan ,  Matthew King

    发明人： Alexander I. Gurary ,  Vadim Boguslavskiy ,  Sandeep Krishnan ,  Matthew King

    IPC分类号： G01K15/00

    CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048

    摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of positioning a calibrating pyrometer at a first calibrating position and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating the support element about the rotational axis, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer installed at a first operating position, and obtaining first calibrating temperature measurements from the calibration pyrometer. Both the calibrating pyrometer and the first operating pyrometer desirably are adapted to receive radiation from a first portion of a wafer support element at a first radial distance from a rotational axis of the wafer support element.

    摘要翻译： 用于晶片处理反应器例如化学气相沉积反应器的原位高温计校准的方法理想地包括以下步骤：将校准高温计放置在第一校准位置并加热反应器直到反应器达到高温计校准温度。 该方法理想地还包括围绕旋转轴线旋转支撑元件，并且当支撑元件围绕旋转轴线旋转时，从安装在第一操作位置的第一操作高温计获得第一操作温度测量值，并获得第一校准温度测量值 校准高温计。 校准高温计和第一操作高温计都期望地适于在离晶片支撑元件的旋转轴线的第一径向距离处接收来自晶片支撑元件的第一部分的辐射。