Method and apparatus for processing a semiconductor wafer using novel final polishing method
    1.
    发明授权
    Method and apparatus for processing a semiconductor wafer using novel final polishing method 有权
    使用新的最终抛光方法处理半导体晶片的方法和装置

    公开(公告)号:US06709981B2

    公开(公告)日:2004-03-23

    申请号:US09928559

    申请日:2001-08-13

    IPC分类号: H01L21461

    摘要: A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.

    摘要翻译: 制造半导体晶片的方法包括提供半导体材料锭,从锭切片晶片,以及加工晶片以增加前表面和后表面的平行度。 通过将晶片定位在第一焊盘和第二焊盘之间并且获得晶片的前表面和后表面相对于第一和第二焊盘的运动来实现至少前表面的最终抛光操作,以保持晶片的前表面和第二焊盘的平行度 并且在至少晶片的前表面上产生光洁度,使得前表面准备用于集成电路制造。 在另一方面,通过冲洗流体冲洗晶片以增加流体动力润滑。 其他方法涉及调整抛光垫和抛光后处理晶片。 还包括用于抛光晶片的设备。