公开(公告)号：US08236703B2

公开(公告)日：2012-08-07

申请号：US12208608

申请日：2008-09-11

申请人： Alfred J. Griffin, Jr. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

发明人： Alfred J. Griffin, Jr. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/8501 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

摘要翻译： 从半导体器件去除污染物的方法，其包括在衬底的半导体表面上的多个含铝键合焊盘。 在基板的半导体表面上形成多个含铝键合焊盘。 然后在半导体表面上形成图案化的钝化层，其中图案化的钝化层为多个接合焊盘提供暴露的区域。 使用基本蚀刻溶液的湿蚀刻蚀刻含铝键合焊盘的暴露区域的表面，其中湿蚀刻从接合焊盘的表面去除至少100埃以形成清洁的表面。

公开(公告)号：US20090068847A1

公开(公告)日：2009-03-12

申请号：US12208608

申请日：2008-09-11

申请人： Alfred J. Griffin, JR. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

发明人： Alfred J. Griffin, JR. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

IPC分类号： H01L21/71

CPC分类号： H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/8501 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

摘要翻译： 从半导体器件去除污染物的方法，其包括在衬底的半导体表面上的多个含铝键合焊盘。 在基板的半导体表面上形成多个含铝键合焊盘。 然后在半导体表面上形成图案化的钝化层，其中图案化的钝化层为多个接合焊盘提供暴露的区域。 使用基本蚀刻溶液的湿蚀刻蚀刻含铝键合焊盘的暴露区域的表面，其中湿蚀刻从接合焊盘的表面去除至少100埃以形成清洁的表面。