公开(公告)号：US08431463B2

公开(公告)日：2013-04-30

申请号：US12538530

申请日：2009-08-10

Applicant: Maxwell Walthour Lippitt, III ,  Stephen Arlon Meisner ,  Lee Alan Stringer ,  Stephen Fredrick Clark ,  Fred Percy Debnam, II ,  Byron Lovell Williams

Inventor： Maxwell Walthour Lippitt, III ,  Stephen Arlon Meisner ,  Lee Alan Stringer ,  Stephen Fredrick Clark ,  Fred Percy Debnam, II ,  Byron Lovell Williams

IPC: H01L21/20

CPC classification number: H01L24/02 ,  H01L23/5223 ,  H01L28/91 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19041

Abstract: A method is disclosed for passivating and contacting a capacitor in an IC above a top level of interconnect metallization, without adding process steps. Passivation is accomplished by a dielectric layer, part of the IC protective overcoat, deposited directly on the capacitor, overlapping the electrode edges. Contact is made to the top electrode of the capacitor by etching small capacitor vias during a bond pad via etch process, followed by depositing and patterning bond pad metal in the capacitor vias to connect the top electrode to other circuit elements in the IC. The top electrode thickness is increased to accommodate the bond pad via etch process.

Abstract translation: 公开了一种用于钝化和接触位于互连金属化顶层之上的IC中的电容器的方法，而不添加工艺步骤。 钝化是通过绝缘层（IC保护外涂层的一部分）直接沉积在电容器上，与电极边缘重叠来实现的。 通过在接合焊盘通过蚀刻工艺中蚀刻小电容器通孔来接触电容器的顶部电极，然后在电容器通孔中沉积和图案化接合焊盘金属以将顶部电极连接到IC中的其它电路元件。 增加顶部电极厚度以通过蚀刻工艺适应接合焊盘。

公开(公告)号：US08236703B2

公开(公告)日：2012-08-07

申请号：US12208608

申请日：2008-09-11

Applicant: Alfred J. Griffin, Jr. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

Inventor： Alfred J. Griffin, Jr. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/8501 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

Abstract translation: 从半导体器件去除污染物的方法，其包括在衬底的半导体表面上的多个含铝键合焊盘。 在基板的半导体表面上形成多个含铝键合焊盘。 然后在半导体表面上形成图案化的钝化层，其中图案化的钝化层为多个接合焊盘提供暴露的区域。 使用基本蚀刻溶液的湿蚀刻蚀刻含铝键合焊盘的暴露区域的表面，其中湿蚀刻从接合焊盘的表面去除至少100埃以形成清洁的表面。

公开(公告)号：US20100032803A1

公开(公告)日：2010-02-11

申请号：US12538530

申请日：2009-08-10

Applicant: Maxwell Walthour Lippitt, III ,  Stephen Arlon Meisner ,  Lee Alan Stringer ,  Stephen Fredrick Clark ,  Fred Percy Debnam, II ,  Byron Lovell Williams

Inventor： Maxwell Walthour Lippitt, III ,  Stephen Arlon Meisner ,  Lee Alan Stringer ,  Stephen Fredrick Clark ,  Fred Percy Debnam, II ,  Byron Lovell Williams

IPC: H01L29/92 ,  H01L21/02

CPC classification number: H01L24/02 ,  H01L23/5223 ,  H01L28/91 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19041

Abstract: A method is disclosed for passivating and contacting a capacitor in an IC above a top level of interconnect metallization, without adding process steps. Passivation is accomplished by a dielectric layer, part of the IC protective overcoat, deposited directly on the capacitor, overlapping the electrode edges. Contact is made to the top electrode of the capacitor by etching small capacitor vias during a bond pad via etch process, followed by depositing and patterning bond pad metal in the capacitor vias to connect the top electrode to other circuit elements in the IC. The top electrode thickness is increased to accommodate the bond pad via etch process.

Abstract translation: 公开了一种用于钝化和接触位于互连金属化顶层之上的IC中的电容器的方法，而不添加工艺步骤。 钝化是通过绝缘层（IC保护外涂层的一部分）直接沉积在电容器上，与电极边缘重叠来实现的。 通过在接合焊盘通过蚀刻工艺中蚀刻小电容器通孔来接触电容器的顶部电极，然后在电容器通孔中沉积和图案化接合焊盘金属以将顶部电极连接到IC中的其它电路元件。 增加顶部电极厚度以通过蚀刻工艺适应接合焊盘。

公开(公告)号：US20090068847A1

公开(公告)日：2009-03-12

申请号：US12208608

申请日：2008-09-11

Applicant: Alfred J. Griffin, JR. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

Inventor： Alfred J. Griffin, JR. ,  Lisa A. Fritz ,  Lin Li ,  Lee Alan Stringer ,  Neel A. Bhatt ,  John Paul Campbell ,  Stephen Arlon Meisner ,  Charles Leighton

IPC: H01L21/71

CPC classification number: H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/8501 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.

Abstract translation: 从半导体器件去除污染物的方法，其包括在衬底的半导体表面上的多个含铝键合焊盘。 在基板的半导体表面上形成多个含铝键合焊盘。 然后在半导体表面上形成图案化的钝化层，其中图案化的钝化层为多个接合焊盘提供暴露的区域。 使用基本蚀刻溶液的湿蚀刻蚀刻含铝键合焊盘的暴露区域的表面，其中湿蚀刻从接合焊盘的表面去除至少100埃以形成清洁的表面。