Method of depositing a polycrystalline diamond layer on a nitride
substrate
    4.
    发明授权
    Method of depositing a polycrystalline diamond layer on a nitride substrate 失效
    在氮化物衬底上沉积多晶金刚石层的方法

    公开(公告)号:US5925413A

    公开(公告)日:1999-07-20

    申请号:US823598

    申请日:1997-03-25

    CPC分类号: C23C16/27 C23C16/0227

    摘要: A method of depositing a polycrystalline diamond layer on a nitride substrate is disclosed, which comprises chemically-etching the nitride substrate with a KOH or NaOH solution or melt and depositing the polycrystalline diamond layer on the nitride substrate from a vapor phase, wherein the etching temperature, time and concentration of the etchant are controlled so that at least 75% of the interface between the substrate and the diamond layer is covered by diamond crystals, each diamond crystal having a contact area with the substrate of .gtoreq.20 um.sup.2.

    摘要翻译: 公开了一种在氮化物衬底上沉积多晶金刚石层的方法,其中包括用KOH或NaOH溶液或熔融物对氮化物衬底进行化学蚀刻,并从气相沉积氮化物衬底上的多晶金刚石层,其中蚀刻温度 控制蚀刻剂的时间和浓度,使得衬底和金刚石层之间的界面的至少75%被金刚石晶体覆盖,每个金刚石晶体与衬底的接触面积为≥20μm2。