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1.发明授权Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control 有权用于前馈和反馈过程控制的集成相位角和光学关键尺寸测量计量公开(公告)号：US07250309B2
公开(公告)日：2007-07-31
申请号：US10754321
申请日：2004-01-09
申请人： Alfred W. Mak , Yung-Hee Yvette Lee , Cynthia B. Brooks , Melisa J. Buie , Turgut Sahin , Jian Ding
发明人： Alfred W. Mak , Yung-Hee Yvette Lee , Cynthia B. Brooks , Melisa J. Buie , Turgut Sahin , Jian Ding
IPC分类号： G01R31/26
摘要： Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.
摘要翻译： 用于控制关键尺寸和监测光掩模相移角的方法和装置。 晶圆处理之前和晶片处理后的关键尺寸测量数据由集成计量工具收集，以调整工艺配方，以确定临界尺寸是否在规范中，并确定是否需要额外的蚀刻。 晶圆处理后的基板测量的相移角和均匀度由集成计量工具收集，以确定相移角及其均匀性是否在规范中。 如果需要附加蚀刻，则实时处理配方调整和确定允许过程控制的紧固。 相移角和均匀性监测允许在线筛选相移光掩模。
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公开(公告)号：US07371485B2
公开(公告)日：2008-05-13
申请号：US11264189
申请日：2005-10-31
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.
摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 在一个方面，提供了一种用于处理光刻掩模版的方法，包括将掩模版定位在处理室中的支撑构件上，其中所述掩模版包括形成在硅基衬底上的金属光掩模层和沉积在所述衬底上的图案化抗蚀剂材料 硅基衬底，用无氧处理气体蚀刻衬底，然后用含氧处理气体蚀刻衬底。
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公开(公告)号：US06960413B2
公开(公告)日：2005-11-01
申请号：US10803867
申请日：2004-03-18
IPC分类号： A61N5/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F4/00 , G03C5/00 , G03F1/00 , G03F1/80 , G03F9/00 , G21G5/00
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.
摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 在一个方面，提供了一种用于处理光刻掩模版的方法，包括将掩模版定位在处理室中的支撑构件上，其中所述掩模版包括形成在硅基衬底上的金属光掩模层和沉积在所述衬底上的图案化抗蚀剂材料 硅基衬底，用无氧处理气体蚀刻衬底，然后用含氧处理气体蚀刻衬底。
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公开(公告)号：US07018934B2
公开(公告)日：2006-03-28
申请号：US10235223
申请日：2002-09-04
申请人： Melisa J. Buie , Brigitte C. Stoehr
发明人： Melisa J. Buie , Brigitte C. Stoehr
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , C23F4/00 , G03F1/80 , H01L21/32136
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, (iii) another chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate.
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公开(公告)号：US07115523B2
公开(公告)日：2006-10-03
申请号：US10391071
申请日：2003-03-18
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , G03F1/30 , H01J2237/334 , H01L21/31116
摘要： A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.
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6.发明授权Method and apparatus for measuring etch uniformity of a semiconductor wafer 失效用于测量半导体晶片的蚀刻均匀性的方法和装置公开(公告)号：US06649075B1
公开(公告)日：2003-11-18
申请号：US08686229
申请日：1996-07-23
申请人： Melisa J. Buie , Leonid Poslavsky , Jennifer Lewis
发明人： Melisa J. Buie , Leonid Poslavsky , Jennifer Lewis
IPC分类号： G01L1102
CPC分类号： H01J37/32935 , H01J37/32972 , H01J37/3299 , H01J2237/334
摘要： A method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system. The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.
摘要翻译： 一种用于在半导体晶片处理系统内进行原位测量蚀刻均匀性的方法和装置。 具体来说，该装置和伴随方法分析由OES系统产生的光发射光谱（OES）数据。 当获取数据时，分析计算OES数据的一阶导数。 当数据满足特定的触发条件时，一阶导数的值与特定的均匀性值相关。 因此，系统使用原位测量技术为半导体晶片产生均匀性值。
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