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公开(公告)号:US3969164A
公开(公告)日:1976-07-13
申请号:US605041
申请日:1975-08-15
IPC分类号: C23G1/00 , H01L21/02 , H01L21/306 , H01L21/203 , H01L21/316
CPC分类号: H01L21/02054 , H01L21/02046 , H01L21/02052 , Y10S148/056 , Y10S148/065 , Y10S148/118 , Y10S148/169 , Y10S438/974
摘要: Surface contamination of Group III(a)-V(a) substrates prior to epitaxial growth can influence structural, optical, and electrical properties of the resulting layers. Of the common contaminants, sulfur, nitrogen, carbon, and oxygen, which are found on substrate surfaces, only carbon cannot be removed by simple heating. By passivating the substrate surface with a native oxide coating after chemical etching and before atmospheric exposure, the carbon-containing contamination can be virtually eliminated since these compounds have low sticking coefficients on the native oxide. The oxide can then be readily stripped off by heating in a vacuum to leave essentially an atomically clean substrate surface.
摘要翻译: 在外延生长之前,组III(a)-V(a)衬底的表面污染可影响所得层的结构,光学和电学性质。 在基板表面上发现的常见污染物中,硫,氮,碳和氧,只能通过简单的加热来除去碳。 通过在化学蚀刻之后和大气暴露之前用自然氧化物涂层钝化衬底表面,由于这些化合物在天然氧化物上具有低粘附系数,因此可以实际上消除含碳污染物。 然后可以通过在真空中加热容易地除去氧化物,从而基本上留下原子清洁的基底表面。