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公开(公告)号：US08563408B2
公开(公告)日：2013-10-22
申请号：US13535528
申请日：2012-06-28
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
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2.发明授权公开(公告)号：US08455420B2
公开(公告)日：2013-06-04
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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3.发明授权公开(公告)号：US08252673B2
公开(公告)日：2012-08-28
申请号：US12643454
申请日：2009-12-21
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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4.发明申请公开(公告)号：US20110151653A1
公开(公告)日：2011-06-23
申请号：US12643454
申请日：2009-12-21
IPC分类号： H01L21/306 , H01L21/266 , G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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5.发明申请公开(公告)号：US20120270763A1
公开(公告)日：2012-10-25
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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公开(公告)号：US20120276724A1
公开(公告)日：2012-11-01
申请号：US13535528
申请日：2012-06-28
IPC分类号： H01L21/266
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
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7.发明授权Aqueous cerium-containing solution having an extended bath lifetime for removing mask material 失效含有水溶液的具有延长浸泡寿命的含铈溶液，用于除去掩模材料公开(公告)号：US08618036B2
公开(公告)日：2013-12-31
申请号：US13295677
申请日：2011-11-14
申请人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C. M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
发明人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C. M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
IPC分类号： H01L21/302 , H01L21/311
CPC分类号： H01L21/31133 , C09K13/04 , G03F7/423 , G03F7/425 , G03F7/426
摘要： An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.
摘要翻译： 提供具有延长寿命的铈（IV）络合物或盐的水溶液。 在一个实施方案中，通过向铈（IV）络合物或盐的水溶液中加入至少一种助剂添加剂来实现延长的寿命。 在另一个实施方案中，通过提供铈（IV）络合物或盐和铈（III）络合物或盐的水溶液来实现延长的寿命。 可以加入铈（III）络合物或盐，或者可以通过将还原剂引入铈（IV）络合物或盐的水溶液中而原位产生。 水溶液可用于从半导体衬底的表面去除掩模材料，特别是离子注入和图案化的光致抗蚀剂。
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8.发明申请AQUEOUS CERIUM-CONTAINING SOLUTION HAVING AN EXTENDED BATH LIFETIME FOR REMOVING MASK MATERIAL 失效含有延长护罩寿命的含有水溶液的解决方案可用于去除面膜材料公开(公告)号：US20130123159A1
公开(公告)日：2013-05-16
申请号：US13295677
申请日：2011-11-14
申请人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C.M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
发明人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C.M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , C09K13/04 , G03F7/423 , G03F7/425 , G03F7/426
摘要： An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.
摘要翻译： 提供具有延长寿命的铈（IV）络合物或盐的水溶液。 在一个实施方案中，通过向铈（IV）络合物或盐的水溶液中加入至少一种助剂添加剂来实现延长的寿命。 在另一个实施方案中，通过提供铈（IV）络合物或盐和铈（III）络合物或盐的水溶液来实现延长的寿命。 可以加入铈（III）络合物或盐，或者可以通过将还原剂引入铈（IV）络合物或盐的水溶液中而原位产生。 水溶液可用于从半导体衬底的表面去除掩模材料，特别是离子注入和图案化的光致抗蚀剂。
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公开(公告)号：US20110140181A1
公开(公告)日：2011-06-16
申请号：US12636015
申请日：2009-12-11
申请人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
发明人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
CPC分类号： G03F7/423 , G03F7/425 , H01L21/31133 , Y10T428/24802
摘要： Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.
摘要翻译： 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈的溶液接触。 铈可以包含在盐中。 该盐可以是硝酸铈铵。
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公开(公告)号：US08367555B2
公开(公告)日：2013-02-05
申请号：US12636015
申请日：2009-12-11
申请人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
发明人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
IPC分类号： H01L21/302
CPC分类号： G03F7/423 , G03F7/425 , H01L21/31133 , Y10T428/24802
摘要： Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.
摘要翻译： 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈的溶液接触。 铈可以包含在盐中。 该盐可以是硝酸铈铵。
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