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公开(公告)号：US08563408B2
公开(公告)日：2013-10-22
申请号：US13535528
申请日：2012-06-28
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
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2.发明授权公开(公告)号：US08455420B2
公开(公告)日：2013-06-04
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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3.发明授权公开(公告)号：US08252673B2
公开(公告)日：2012-08-28
申请号：US12643454
申请日：2009-12-21
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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4.发明申请公开(公告)号：US20110151653A1
公开(公告)日：2011-06-23
申请号：US12643454
申请日：2009-12-21
IPC分类号： H01L21/306 , H01L21/266 , G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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5.发明申请公开(公告)号：US20120270763A1
公开(公告)日：2012-10-25
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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公开(公告)号：US20120276724A1
公开(公告)日：2012-11-01
申请号：US13535528
申请日：2012-06-28
IPC分类号： H01L21/266
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
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公开(公告)号：US08367555B2
公开(公告)日：2013-02-05
申请号：US12636015
申请日：2009-12-11
申请人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
发明人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
IPC分类号： H01L21/302
CPC分类号： G03F7/423 , G03F7/425 , H01L21/31133 , Y10T428/24802
摘要： Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.
摘要翻译： 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈的溶液接触。 铈可以包含在盐中。 该盐可以是硝酸铈铵。
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公开(公告)号：US20110140181A1
公开(公告)日：2011-06-16
申请号：US12636015
申请日：2009-12-11
申请人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
发明人： Ali Afzali-Ardakani , Emanuel Israel Cooper , Mahmoud Khojasteh , Ronald W. Nunes , George Gabriel Totir
CPC分类号： G03F7/423 , G03F7/425 , H01L21/31133 , Y10T428/24802
摘要： Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.
摘要翻译： 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈的溶液接触。 铈可以包含在盐中。 该盐可以是硝酸铈铵。
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9.发明授权公开(公告)号：US06673287B2
公开(公告)日：2004-01-06
申请号：US09858919
申请日：2001-05-16
IPC分类号： B28B736
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0015 , G03F7/405
摘要： A method of exposing a composite organic/inorganic master to alkylchlorosilanes in the vapor phase. Chlorosilanes participate in facile reactions with hydroxyl groups existing on the surface of inorganic oxides (such as glass or the native oxides on silicon, aluminum, tin, etc.); or those in organics-containing phenolic or alcoholic groups, such as photoresists. The alkyl group on the silane can be chosen from a large selection of aliphatic or aromatic organic groups that have substituents with varying polarity and reactivity.
摘要翻译： 将复合有机/无机母体暴露于气相中的烷基氯硅烷的方法。 氯硅烷参与与无机氧化物表面存在的羟基（如玻璃或硅，铝，锡等上的天然氧化物）的容易反应; 或含有有机物的酚类或醇类物质，如光致抗蚀剂。 硅烷上的烷基可以选自具有不同极性和反应性的取代基的大量脂族或芳族有机基团。
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公开(公告)号：US5919597A
公开(公告)日：1999-07-06
申请号：US961112
申请日：1997-10-30
申请人： Roger F. Sinta , Uday Kumar , George W. Orsula , James I. T. Fahey , William R. Brunsvold , Wu-Song Huang , Ahmad D. Katnani , Ronald W. Nunes , Mahmoud M. Khojasteh
发明人： Roger F. Sinta , Uday Kumar , George W. Orsula , James I. T. Fahey , William R. Brunsvold , Wu-Song Huang , Ahmad D. Katnani , Ronald W. Nunes , Mahmoud M. Khojasteh
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Methods are provided to prepare photoresists without isolation of various components, i.e. in a "one-pot" procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.
摘要翻译： 提供了方法来制备光刻胶，而不分离各种组分，即在“一锅”方法中。 本发明优选的一锅制备方法包括在所选择的光致抗蚀剂溶剂中制备光致抗蚀剂树脂粘合剂，并且不从树脂粘合剂与溶剂分离，将光敏组分和任何其它所需的光致抗蚀剂材料加入到溶液中的树脂粘合剂中 在其中制备树脂粘合剂的溶剂中提供液体光致抗蚀剂组合物。 本发明还提供用于合成抗蚀剂树脂粘合剂，特别是含有共价键合到另一部分如酚不稳定基团或惰性封闭基团的酚OH基团的酚类聚合物的新方法。
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