公开(公告)号：US06875091B2

公开(公告)日：2005-04-05

申请号：US09796955

申请日：2001-02-28

申请人： Allan M. Radman ,  Alan J. Jensen ,  Helmuth Treichel ,  Robert G. Boehm ,  Michael S. Lacy ,  Eric A. Dunton

发明人： Allan M. Radman ,  Alan J. Jensen ,  Helmuth Treichel ,  Robert G. Boehm ,  Michael S. Lacy ,  Eric A. Dunton

IPC分类号： B24B1/04 ,  B24B37/04 ,  B24B53/007 ,  B24B53/10 ,  B24B53/07

CPC分类号： B24B1/04 ,  B24B53/017 ,  B24B53/10

摘要： A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

摘要翻译： 描述了一种用于调整抛光垫的方法和装置，其中抛光垫具有用于抛光半导体晶片的抛光表面。 该方法包括将抛光垫的抛光表面上方的声能量发生器定位，并将抛光垫的抛光表面施加声能。 所述设备适于定位在所述抛光表面上方，所述声能发生器包括换能器和与所述换能器流动连通的液体载体，其中所述换能器将声能传递到所述液体载体中，并且所述液体载体被施加 到抛光带的抛光表面。

公开(公告)号：US06187684B1

公开(公告)日：2001-02-13

申请号：US09458550

申请日：1999-12-09

申请人： Jeffrey J. Farber ,  Allan M. Radman ,  Helmuth W. Treichel

发明人： Jeffrey J. Farber ,  Allan M. Radman ,  Helmuth W. Treichel

IPC分类号： H01L21302

CPC分类号： H01L21/02063

摘要： A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water. The brush scrubbing in the first and second brush stations is configured to remove the polymer film from the side walls of the via feature.

摘要翻译： 提供了用于等离子体蚀刻清洗半导体晶片的方法。 半导体晶片具有形成在其上的多个层，并且多个层中的一个层是具有上覆光致抗蚀剂掩模的氧化物层。 该方法包括等离子体蚀刻氧化物层中的通孔特征。 等离子体蚀刻被配置为在通孔特征的侧壁上产生聚合物膜。 然后执行灰化操作以去除光致抗蚀剂掩模。 然后该方法移动以在第一电刷站中用第一化学品擦洗在氧化物层中定义的氧化物层和通孔特征。 擦洗氧化物层和通孔特征的刷子在第一电刷站中用去离子水进行。 然后，氧化物层和通孔特征在第二个电刷站中用第二种化学物质刷洗。 在相同的第二刷台中，氧化物层和通孔特征用去离子水洗涤。 在第一和第二刷站中的刷洗被配置成从通孔特征的侧壁去除聚合物膜。

公开(公告)号：US06910949B1

公开(公告)日：2005-06-28

申请号：US09843323

申请日：2001-04-25

申请人： Allan M. Radman

发明人： Allan M. Radman

IPC分类号： B24B37/04 ,  B24B41/06 ,  B24B1/00 ,  B24B47/02

CPC分类号： B24B37/30

摘要： A polishing head for use in an apparatus for chemically-mechanically polishing semiconductor wafers is provided. The polishing head includes a first side having at least a portion thereof operably connectable with a spindle on the apparatus; and a second side opposite the first side, the second side having a substantially spherical cap shape comprising an outer region adapted to apply a first force onto a semiconductor wafer against a polishing pad, and an inner region adapted to apply a second force onto the semiconductor wafer against the polishing pad, the second force being different from the first force, whereby the first force and the second force cause the polishing pad to planarize the semiconductor wafer substantially uniformly. A method of polishing semiconductor wafers is also provided.

摘要翻译： 提供了一种用于化学机械抛光半导体晶片的设备的抛光头。 抛光头包括第一侧，其第一侧至少有一部分可与设备上的主轴可操作连接; 以及与所述第一侧相对的第二侧，所述第二侧具有基本上球形的盖形状，其包括适于将第一力施加到衬底上的第一力抵靠抛光垫的外部区域，以及适于将第二力施加到所述半导体上的内部区域 晶片抵靠抛光垫，第二力不同于第一力，由此第一力和第二力使抛光垫基本均匀地平坦化半导体晶片。 还提供了一种抛光半导体晶片的方法。