公开(公告)号：US20250164585A1

公开(公告)日：2025-05-22

申请号：US18511743

申请日：2023-11-16

Applicant: Allegro MicroSystems, LLC

Inventor： Paolo Campiglio ,  Samridh Jaiswal ,  Maxime Rioult ,  Noémie Belin

IPC: G01R33/09 ,  H01F10/32 ,  H10N50/01 ,  H10N50/10

Abstract: Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.

公开(公告)号：US20240133977A1

公开(公告)日：2024-04-25

申请号：US18049359

申请日：2022-10-24

Applicant: Allegro MicroSystems, LLC

Inventor： Samridh Jaiswal ,  Paolo Campiglio ,  Sundar Chetlur

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0052 ,  G01R33/093 ,  G01R33/098

Abstract: In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

公开(公告)号：US20240230792A9

公开(公告)日：2024-07-11

申请号：US18049359

申请日：2022-10-25

Applicant: Allegro MicroSystems, LLC

Inventor： Samridh Jaiswal ,  Paolo Campiglio ,  Sundar Chetlur

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0052 ,  G01R33/093 ,  G01R33/098

Abstract: In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

公开(公告)号：US20240085463A1

公开(公告)日：2024-03-14

申请号：US17931197

申请日：2022-09-12

Applicant: Allegro MicroSystems, LLC

Inventor： Samridh Jaiswal ,  Paolo Campiglio ,  Sundar Chetlur ,  Maxim Klebanov ,  Yen Ting Liu

IPC: G01R15/20 ,  G01R19/00

CPC classification number: G01R15/205 ,  G01R19/0092

Abstract: In one aspect, a sensor includes a first metal layer portion and a second metal layer portion separated by an insulator material; a conductive material layer in electrical contact with the first metal layer portion and the second metal layer portion; and a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive material layer. A first current is configured to flow from the first metal layer portion, through the conductive material layer, to the second metal layer portion, and a second current is configured to flow from the first metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.

公开(公告)号：US20240255592A1

公开(公告)日：2024-08-01

申请号：US18161145

申请日：2023-01-30

Applicant: Allegro MicroSystems, LLC

Inventor： Samridh Jaiswal ,  Paolo Campiglio ,  Ronald Lehndorff ,  Yen Ting Liu

IPC: G01R33/09 ,  G01B7/30

CPC classification number: G01R33/091 ,  G01B7/30 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098

Abstract: In one aspect, a method includes manufacturing a magnetic-field angle sensor on a wafer. The manufacturing includes forming a cosine bridge that includes forming a first magnetoresistance (MR) element. The manufacturing also includes forming a sine bridge that includes forming a second MR element. Forming the first MR element includes using a process to reduce orthogonality errors between the sine bridge and the cosine bridge caused by anisotropy present in magnetic material in the first MR element.

公开(公告)号：US20240255269A1

公开(公告)日：2024-08-01

申请号：US18159748

申请日：2023-01-26

Applicant: Allegro MicroSystems, LLC

Inventor： Pablo Nicolás Granell ,  Samridh Jaiswal

IPC: G01B7/30 ,  G01D5/16

CPC classification number: G01B7/30 ,  G01D5/16

Abstract: In one aspect, manufacturing a magnetic-field angle sensor includes heating, to a first temperature, a substrate, which includes heating a first magnetoresistance (MR) element including a first type of antiferromagnetic material having a first Néel temperature and a first magnetization direction and heating a second MR element including a second type of antiferromagnetic material having a second Néel temperature and a second magnetization direction. The manufacturing also includes, after heating the substrate to the first temperature, applying a first magnetic field to the substrate in an x-direction to enable a first magnetization direction and a second magnetization direction to be in the x-direction, enabling a temperature of the substrate to be a second temperature and applying a second magnetic field to the substrate in a y-direction to enable the second magnetization direction to be in the y-direction while the first magnetization direction remains in the x-direction.

公开(公告)号：US20240074322A1

公开(公告)日：2024-02-29

申请号：US17823461

申请日：2022-08-30

Applicant: Allegro MicroSystems, LLC

Inventor： Maxim Klebanov ,  Yen Ting Liu ,  Sundar Chetlur ,  Paolo Campiglio ,  Samridh Jaiswal

IPC: H01L43/12 ,  G01R33/00 ,  H01F41/34

CPC classification number: H01L43/12 ,  G01R33/0052 ,  H01F41/34 ,  H01L43/02

Abstract: In one aspect, a method includes depositing magnetoresistance (MR) layers of a MR element on a semiconductor structure; depositing a first hard mask on the MR layers; depositing and patterning a first photoresist on the first hard mask using photolithography to expose portions of the first hard mask; etching the exposed portions of the first hard mask; etching a portion of the MR layers using the first hard mask; depositing a second hard mask on a first capping layer; depositing and patterning a second photoresist on the second hard mask using photolithography to expose portions of the second hard mask; etching the exposed portions of the second hard mask; etching the MR element using the second hard mask; etching portions of the first hard mask down to a top MR layer of the MR element; and depositing a conducting material on the top MR layer to form an electroconductive contact.

公开(公告)号：US12000870B2

公开(公告)日：2024-06-04

申请号：US17931197

申请日：2022-09-12

Applicant: Allegro MicroSystems, LLC

Inventor： Samridh Jaiswal ,  Paolo Campiglio ,  Sundar Chetlur ,  Maxim Klebanov ,  Yen Ting Liu

IPC: G01R33/09 ,  G01R15/20 ,  G01R19/00

CPC classification number: G01R15/205 ,  G01R19/0092

Abstract: In one aspect, a sensor includes a first metal layer portion and a second metal layer portion separated by an insulator material; a conductive material layer in electrical contact with the first metal layer portion and the second metal layer portion; and a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive material layer. A first current is configured to flow from the first metal layer portion, through the conductive material layer, to the second metal layer portion, and a second current is configured to flow from the first metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.

公开(公告)号：US20240027547A1

公开(公告)日：2024-01-25

申请号：US17813412

申请日：2022-07-19

Applicant: Allegro MicroSystems, LLC

Inventor： Samridh Jaiswal ,  Paolo Campiglio

IPC: G01R33/09 ,  H01F10/32 ,  H01L43/10 ,  H01L43/08

CPC classification number: G01R33/093 ,  H01F10/3286 ,  H01L43/10 ,  H01L43/08 ,  G01R33/098

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor a free layer with a thickness of the CoFeB material to produce out-of-plane sensing for the sensor and a reference layer magnetically coupled to the free layer. A dusting layer of an oxide material is disposed on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide layer and the free layer for a desired sensitivity for the sensor.

公开(公告)号：US11719771B1

公开(公告)日：2023-08-08

申请号：US17805054

申请日：2022-06-02

Applicant: Allegro MicroSystems, LLC

Inventor： Paolo Campiglio ,  Samridh Jaiswal ,  Yen Ting Liu ,  Maxim Klebanov ,  Sundar Chetlur

IPC: G01R33/09 ,  H10N50/80 ,  H10N50/85

CPC classification number: G01R33/091 ,  H10N50/80 ,  H10N50/85 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor including a seed layer having a CoFe layer for canceling hysteresis in the MR sensor. The MR stackup can include a free layer and a reference layer. The seed layer having CoFe provides a desired texturing of the stackup to cancel hysteresis effects.