公开(公告)号：US4498010A

公开(公告)日：1985-02-05

申请号：US491678

申请日：1983-05-05

Applicant: Charles S. Biechler ,  Allen M. Carroll ,  Richard E. Graves ,  Steven A. Lyons

Inventor： Charles S. Biechler ,  Allen M. Carroll ,  Richard E. Graves ,  Steven A. Lyons

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J37/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30488 ,  H01J2237/30494

Abstract: A technique performed in a fixed address particle beam lithographic system where the writing is performed in the normal manner for writing a pattern, for example, a stripe on a resist having a selected feature width except that an additional row of alternate pixels is written either before or after the selected feature is written. The alternate pixels, when the resist is developed, will provide a feature width of approximately 1/2 a pixel wider than the selected feature width due to blurring of the latent image caused by scattering of the particle beam within the resist. Thus, the resolution of selectable feature widths is enhanced with little or no loss of throughput. The same technique can also be utilized to lengthen a feature by 1/2 a pixel width. The technique is disclosed primarily in a raster scan machine but also disclosed is the technique in a vector scan machine. Also disclosed is a flow chart showing the invention used while preparing the data to be written by the machine.

Abstract translation: 在固定地址粒子束光刻系统中进行的技术，其中以正常方式执行写入，以便在具有选定的特征宽度的抗蚀剂上的图案（例如，条纹）之外进行写入，除了附加的交替像素行之前 或在所选功能被写入之后。 当抗蚀剂显影时，替代像素将提供比所选特征宽度大约1/2像素的特征宽度，这是由于由抗蚀剂内的粒子束的散射引起的潜像的模糊。 因此，增加了可选特征宽度的分辨率，很少或没有丢失吞吐量。 也可以使用相同的技术来将特征延长1/2像素宽度。 该技术主要在光栅扫描机中公开，但也公开了矢量扫描机中的技术。 还公开了示出在准备要由机器写入的数据时使用的本发明的流程图。

公开(公告)号：US07958464B1

公开(公告)日：2011-06-07

申请号：US12199922

申请日：2008-08-28

Applicant: Luca Grella ,  Allen M. Carroll

Inventor： Luca Grella ,  Allen M. Carroll

IPC: G06F17/50

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

Abstract: A method for creating an electron beam pattern exposure, where a pattern of shapes is generated, including at least one of lines and vias. To each shape there is assigned a set of exposure pixels and edge placement constraints. An intensity at each exposure pixel is calculated by using a simplex method, and a latent resist image location is calculated by convolving a proximity function with the pixel intensities. A shape critical dimension and a shape edge slope is statistically evaluated by applying linear regression on the locations of the calculated latent image. The electron beam pattern exposures are produced using dosages linearly optimized on a rotated pixel grid to produce the shape critical dimension and the shape edge slope.

Abstract translation: 一种用于产生电子束图案曝光的方法，其中产生形状图案，其包括线和通孔中的至少一个。 对于每个形状，分配一组曝光像素和边缘放置约束。 通过使用单纯形法计算每个曝光像素的强度，并且通过将接近函数与像素强度进行卷积来计算潜像抗蚀剂图像位置。 通过对所计算的潜像的位置应用线性回归来统计评估形状临界尺寸和形状边缘斜率。 使用在旋转的像素网格上线性优化的剂量产生电子束图案曝光以产生形状临界尺寸和形状边缘斜率。

公开(公告)号：US07696498B2

公开(公告)日：2010-04-13

申请号：US11686905

申请日：2007-03-15

Applicant: Allen M. Carroll

Inventor： Allen M. Carroll

IPC: G01J3/10

CPC classification number: H01J1/34 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: Embodiments of the invention include an electron beam lithography device using a dynamically controllable photocathode capable of producing a patterned electron beam. One such implementation includes a dynamic pattern generator configurable to produce an electron beam having a desired image pattern impressed thereon. Such an electron beam pattern being enabled by selectively activating programmable photoemissive elements of the pattern generator. The apparatus further including an illumination source arranged to direct a light beam onto the dynamic pattern generator to produce the electron beam having the desired pattern. The electron beam being directed through associated electron optics configured to receive the electron beam from the dynamic pattern generator and direct the electron beam onto a target substrate mounted on a stage.

Abstract translation: 本发明的实施例包括使用能够产生图案化电子束的动态可控光电阴极的电子束光刻装置。 一种这样的实现包括动态图案发生器，其被配置为产生具有所加载的所需图像图案的电子束。 这种电子束图案通过选择性地激活图案发生器的可编程发光元件来实现。 该装置还包括照明源，其被布置成将光束引导到动态图案发生器上以产生具有期望图案的电子束。 电子束通过相关联的电子光学器件被配置成从动态图案发生器接收电子束并将电子束引导到安装在载物台上的目标基底上。

公开(公告)号：US20080169436A1

公开(公告)日：2008-07-17

申请号：US11686905

申请日：2007-03-15

Applicant: Allen M. Carroll

Inventor： Allen M. Carroll

IPC: G21K5/04

CPC classification number: H01J1/34 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: Embodiments of the invention include an electron beam lithography device using a dynamically controllable photocathode capable of producing a patterned electron beam. One such implementation includes a dynamic pattern generator configurable to produce an electron beam having a desired image pattern impressed thereon. Such an electron beam pattern being enabled by selectively activating programmable photoemissive elements of the pattern generator. The apparatus further including an illumination source arranged to direct a light beam onto the dynamic pattern generator to produce the electron beam having the desired pattern. The electron beam being directed through associated electron optics configured to receive the electron beam from the dynamic pattern generator and direct the electron beam onto a target substrate mounted on a stage.

Abstract translation: 本发明的实施例包括使用能够产生图案化电子束的动态可控光电阴极的电子束光刻装置。 一种这样的实现包括动态图案发生器，其被配置为产生具有所加载的所需图像图案的电子束。 这种电子束图案通过选择性地激活图案发生器的可编程发光元件来实现。 该装置还包括照明源，其被布置成将光束引导到动态图案发生器上以产生具有期望图案的电子束。 电子束通过相关联的电子光学器件被配置成从动态图案发生器接收电子束并将电子束引导到安装在载物台上的目标基底上。

公开(公告)号：US06436607B1

公开(公告)日：2002-08-20

申请号：US09517612

申请日：2000-03-02

Applicant: Richard L. Lozes ,  Andrew Muray ,  Allen M. Carroll

Inventor： Richard L. Lozes ,  Andrew Muray ,  Allen M. Carroll

IPC: G03C500

CPC classification number: G03F1/36 ,  G03F7/70383 ,  G03F7/70441 ,  H01J37/3026 ,  H01J2237/31769

Abstract: Dose conservation is used during pattern modification in the data preparation phase of scanning beam lithography. The features to be exposed on a substrate, such as a mask or direct written semiconductor wafer, are corrected while neighboring features suffer little or no change. Thus, the edge of a feature is moved in terms of its exposure location without appreciably affecting the scattering into its neighbors. This achieves a developed feature which meets the intended design edge location. This process also corrects for variations in resist profile angles which otherwise may vary depending upon localized feature packing density. Not only is the feature edge moved but its dose per area is adjusted while conserving total dose over the feature.

Abstract translation: 在扫描光束光刻的数据准备阶段，图案修改期间使用剂量保持。 在基板上露出的特征，例如掩模或直接写入的半导体晶片，在相邻特征几乎没有或没有变化的情况下被校正。 因此，特征的边缘根据其曝光位置移动，而不会明显地影响到其邻居的散射。 这实现了开发的特征，其满足预期的设计边缘位置。 该过程还校正抗蚀剂轮廓角的变化，否则可能根据局部特征填充密度而变化。 不仅功能边缘移动，而且调整其面积的剂量，同时节省特征上的总剂量。

公开(公告)号：US4788431A

公开(公告)日：1988-11-29

申请号：US36731

申请日：1987-04-10

Applicant: William A. Eckes ,  Lee Veneklasen ,  Glen E. Howard ,  Donald J. McCarthy ,  Allen M. Carroll ,  Daniel L. Cavan

Inventor： William A. Eckes ,  Lee Veneklasen ,  Glen E. Howard ,  Donald J. McCarthy ,  Allen M. Carroll ,  Daniel L. Cavan

IPC: G01B15/00 ,  G01Q20/04 ,  G01Q30/02 ,  H01J37/20 ,  H01J37/244 ,  H01J37/304 ,  H01L21/027

CPC classification number: H01J37/244 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24578

Abstract: A specimen distance measuring system uses a plate (36) to obstruct the flux of backscattered electrons produced by an electron beam (18), and to cast a shadow across a measurement detector (32) which is sensitive to the position of the shadow. The shadow plate (36) and measurement detector (32) are aligned at an angle of approximately 45 degrees with a substrate (14) in order to allow calibration of the distance measuring system by scanning the electron beam (18). The measuring system is particularly useful as a height sensor (10) in an electron beam lithography apparatus (12) for sensing the height of a substrate (14). The distance measuring system may also include a reference detector (34) which is positioned in order to receive backscattered electron flux without obstruction from the shadow plate (36). The use of such a reference detector (32) is advantageous in allowing compensation of the signals obtained by the measurement detector, in order to allow the height sensor to operate independently of variations in electron beam current, and variations in substrate backscatter coefficient. The reference and measurement detectors (34,32) may be aligned in a vertical or horizontal plane to be either parallel to or perpendicular to the bombardment electron beam (18). Active feedback may be provided from the height sensor (10) to a vertical stage actuator for adjusting the height of the substrate (14).

Abstract translation: 样本距离测量系统使用板（36）来阻挡由电子束（18）产生的背向散射电子的通量，并且跨越对阴影位置敏感的测量检测器（32）投射阴影。 阴影板（36）和测量检测器（32）以大约45度的角度与衬底（14）对准，以便允许通过扫描电子束（18）校准距离测量系统。 该测量系统特别适用于用于感测衬底（14）的高度的电子束光刻设备（12）中的高度传感器（10）。 距离测量系统还可以包括参考检测器（34），其被定位以便接收反向散射的电子通量而不受到遮挡板（36）的阻碍。 使用这种参考检测器（32）有利于允许补偿由测量检测器获得的信号，以便允许高度传感器独立于电子束电流的变化以及衬底反向散射系数的变化而工作。 参考和测量检测器（34,32）可以在垂直或水平平面中对准以与轰击电子束（18）平行或垂直于轰击电子束（18）。 主动反馈可以从高度传感器（10）提供到用于调节基板（14）的高度的垂直级致动器。