Mirror pulse compressor for electron beam apparatus
    2.
    发明授权
    Mirror pulse compressor for electron beam apparatus 有权
    用于电子束装置的镜面脉冲压缩机

    公开(公告)号:US09406479B1

    公开(公告)日:2016-08-02

    申请号:US14751087

    申请日:2015-06-25

    申请人: Marian Mankos

    发明人: Marian Mankos

    摘要: One embodiment pertains to an apparatus for compressing an electron pulse. An electron source is illuminated by a pulsed laser and generates a pulse of electrons. The pulse enters a beam separator which deflects the electrons by 90 degrees into an electron mirror. The faster, higher energy electrons form the leading edge of the pulse and penetrate more deeply into the retarding field of the electron mirror than the lower energy electrons. After reflection, the lower energy electrons exit the electron mirror before the higher energy electrons and form the leading edge of the pulse. The reflected pulse reenters the separator and is deflected by 90 degrees towards the specimen. The fast, higher energy electrons catch up with the slow, low energy electrons as the electrons strike the specimen. The electrons are scattered by the specimen and used to form a two-dimensional image or diffraction pattern of the specimen.

    摘要翻译: 一个实施例涉及一种用于压缩电子脉冲的装置。 电子源被脉冲激光照射并产生电子脉冲。 脉冲进入光束分离器,将电子偏转90度,使其成为电子反射镜。 更快,更高能量的电子形成脉冲的前沿,并且比较低能量电子更深入地进入电子反射镜的延迟场。 在反射之后,较低能量的电子在较高能量的电子之前离开电子反射镜并形成脉冲的前沿。 反射的脉冲重新进入分离器,并向样品偏转90度。 随着电子撞击样品,快速,高能量的电子赶上缓慢的低能电子。 电子被样品散射并用于形成样品的二维图像或衍射图案。

    Photocathode high-frequency electron-gun cavity apparatus
    3.
    发明授权
    Photocathode high-frequency electron-gun cavity apparatus 有权
    光电阴极高频电子枪腔装置

    公开(公告)号:US09224571B2

    公开(公告)日:2015-12-29

    申请号:US13825918

    申请日:2011-09-26

    摘要: A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

    摘要翻译: 本发明的光电阴极高频电子枪腔装置设置有高频加速腔(1),光电阴极(8,15),激光进入口(9),高频电力输入耦合器 端口(10)和高频谐振调谐器(16)。 这里,该装置采用超小型高频加速器腔,其包含在其内表面上仅形成有平滑且曲面的空腔,而不具有用于防止放电的锐角部,从而获得较高强度的高频电 场,提高高频共振稳定性。 此外,光电阴极被布置在高频加速腔的半电池(5)的端部,用于使光电阴极面的电场强度最大化,通过将激光进入端口布置在面对的位置来确保激光的垂直入射 到高频加速腔的电子束提取口后面的光电阴极,用于使短束光电子的质量最大化,并且高频电力输入耦合器端口布置在高频加速腔的单元的侧面 用于提高高频电场强度。 根据上述,可以提供能够产生高强度和高质量电子束的小型光电阴极高频电子枪腔装置。

    Gun configured to generate charged particles
    4.
    发明授权
    Gun configured to generate charged particles 有权
    枪被配置成产生带电粒子

    公开(公告)号:US09093243B2

    公开(公告)日:2015-07-28

    申请号:US14284128

    申请日:2014-05-21

    发明人: Anjam Khursheed

    摘要: A gun configured to generate charged particles, comprising a ring-cathode (200) electrically configured to generate a charged particle beam; a lens arranged to focus the charged particle beam on a specimen; and at least one correction focusing electrode (1406) arranged to generate at least one electrostatic/magnetic field to further divergently/convergently focus the charged particle beam for correcting in-plane geometric aberrations associated with the lens, the focusing being based on the in-plane geometric aberrations associated with the lens. A related method is also disclosed.

    摘要翻译: 一种配置成产生带电粒子的枪,包括电气配置以产生带电粒子束的环形阴极(200); 透镜,布置成将带电粒子束聚焦在样本上; 以及至少一个校正聚焦电极(1406),其布置成产生至少一个静电/磁场,以进一步发散/收敛地聚焦带电粒子束,用于校正与透镜相关联的面内几何像差, 与透镜相关的平面几何像差。 还公开了相关方法。

    Deconvolution of Time-Gated Cathodoluminescence Images
    5.
    发明申请
    Deconvolution of Time-Gated Cathodoluminescence Images 有权
    时间选择性阴极发光图像的去卷积

    公开(公告)号:US20130193342A1

    公开(公告)日:2013-08-01

    申请号:US13795291

    申请日:2013-03-12

    申请人: ATTOLIGHT SA

    发明人: Jean Berney

    IPC分类号: G21K1/00

    摘要: A method for generating a cathodoluminescence map comprising the steps of: generating an intensity modulated charged particle beam; focusing said charged particle beam on a specimen; gating temporally the cathodoluminescence emitted by said specimen to provide time-gated cathodoluminescence; measuring the time-gated cathodoluminescence for different charged particle beam positions on the specimen to generate a cathodoluminescence map; deconvoluting the cathodoluminescence map to improve the resolution of said cathodoluminescence map. The invention further provides devices for carrying out such methods.

    摘要翻译: 一种用于产生阴极发光图的方法,包括以下步骤:产生强度调制带电粒子束; 将所述带电粒子束聚焦在样品上; 定时地选择由所述样品发射的阴极发光,以提供时间门控的阴极发光; 测量样品上不同带电粒子束位置的时间门阴极发光以产生阴极发光图; 解卷积阴极发光图以改善所述阴极发光图的分辨率。 本发明还提供了用于执行这种方法的装置。

    PHOTOCATHODE HIGH-FREQUENCY ELECTRON-GUN CAVITY APPARATUS
    6.
    发明申请
    PHOTOCATHODE HIGH-FREQUENCY ELECTRON-GUN CAVITY APPARATUS 有权
    光电高频电子气囊设备

    公开(公告)号:US20130187541A1

    公开(公告)日:2013-07-25

    申请号:US13825918

    申请日:2011-09-26

    IPC分类号: H01J29/48

    摘要: A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

    摘要翻译: 本发明的光电阴极高频电子枪腔装置设置有高频加速腔(1),光电阴极(8,15),激光进入口(9),高频电力输入耦合器 端口(10)和高频谐振调谐器(16)。 这里,该装置采用超小型高频加速器腔,其包含在其内表面上仅形成有平滑且曲面的空腔,而不具有用于防止放电的锐角部,从而获得较高强度的高频电 场,提高高频共振稳定性。 此外,光电阴极被布置在高频加速腔的半电池(5)的端部,用于使光电阴极面的电场强度最大化,通过将激光进入端口布置在面对的位置来确保激光的垂直入射 到高频加速腔的电子束提取口后面的光电阴极,用于使短束光电子的质量最大化,并且高频电力输入耦合器端口布置在高频加速腔的单元的侧面 用于提高高频电场强度。 根据上述,可以提供能够产生高强度和高质量电子束的小型光电阴极高频电子枪腔装置。

    ELECTRON MICROSCOPE
    7.
    发明申请
    ELECTRON MICROSCOPE 有权
    电子显微镜

    公开(公告)号:US20130009058A1

    公开(公告)日:2013-01-10

    申请号:US13637227

    申请日:2011-02-22

    IPC分类号: H01J37/06 H01J37/26

    摘要: An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

    摘要翻译: 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括:激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极,其设置有应变超晶格半导体层,并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置,布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布,差分获取装置计算其间的差。

    Electron Beam Irradiation Device
    9.
    发明申请
    Electron Beam Irradiation Device 有权
    电子束照射装置

    公开(公告)号:US20090127473A1

    公开(公告)日:2009-05-21

    申请号:US11920420

    申请日:2005-11-18

    IPC分类号: H01J3/14 A61N5/00

    摘要: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

    摘要翻译: 本发明的电子束照射装置包括:用于产生二维光图案13的投影仪8; 微通道板11,用于(i)基于已经进入的光图案13产生电子束阵列,(ii)放大电子束阵列,和(iii)发射电子束阵列作为放大的电子束阵列14; 以及用于会聚放大电子束阵列14的电子束透镜部分12.该电子束照射装置能够通过使用电子束的照射通过更精细的处理来制造其性能得到改善的半导体器件。 此外,电子束照射装置允许成本降低,因为该装置允许使用二维图案的集体照射。