摘要:
Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.
摘要:
Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.
摘要:
Various methods, designs, defect review tools, and systems for determining locations on a wafer to be reviewed during defect review are provided. One computer-implemented method includes acquiring coordinates of defects detected by two or more inspection systems. The defects do not include defects detected on the wafer. The method also includes determining coordinates of the locations on the wafer to be reviewed during the defect review by translating the coordinates of the defects into the coordinates on the wafer such that results of the defect review performed at the locations can be used to determine if the defects cause systematic defects on the wafer.
摘要:
Various methods, designs, defect review tools, and systems for determining locations on a wafer to be reviewed during defect review are provided. One computer-implemented method includes acquiring coordinates of defects detected by two or more inspection systems. The defects do not include defects detected on the wafer. The method also includes determining coordinates of the locations on the wafer to be reviewed during the defect review by translating the coordinates of the defects into the coordinates on the wafer such that results of the defect review performed at the locations can be used to determine if the defects cause systematic defects on the wafer.
摘要:
Defects observed by imaging tools may be classified by automatic comparison of features observed in a defect image with design information relating to corresponding portions of the image. Defect information may be generated from a defect image from a defect imaging tool. Design information relating to one or more structures to be formed on the substrate in a vicinity of the defect may be retrieved. The defect may be classified based on a combination of the defect information from the defect image and design information relating to one or more structures to be formed on the substrate in the vicinity of the defect.
摘要:
Defects observed by imaging tools may be classified by automatic comparison of features observed in a defect image with design information relating to corresponding portions of the image. Defect information may be generated from a defect image from a defect imaging tool. Design information relating to one or more structures to be formed on the substrate in a vicinity of the defect may be retrieved. The defect may be classified based on a combination of the defect information from the defect image and design information relating to one or more structures to be formed on the substrate in the vicinity of the defect.