公开(公告)号：US09076903B2

公开(公告)日：2015-07-07

申请号：US14150221

申请日：2014-01-08

申请人： Alliance for Sustainable Energy, LLC

发明人： Hao-Chih Yuan ,  Howard M. Branz ,  Matthew R. Page

IPC分类号： H01L21/00 ,  H01L31/0236 ,  H01L31/0232 ,  H01L33/44 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02327 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/44 ,  Y02E10/547 ,  Y02P70/521

摘要： A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

摘要翻译： 提供了一种用于处理渐变密度的AR硅表面（14）以提供有效的表面钝化的方法（50）。 方法（50）包括将具有硅表面（14）的衬底或晶片（12）定位在反应或处理室（42）中。 硅表面（14）已被处理（52）为具有密度梯度或黑色硅区域的AR表面。 方法（50）继续将腔室（42）加热（54）至用于掺杂和表面钝化的高温。 所述方法（50）包括通过与衬底（12）的硅表面（14）接触的含掺杂剂的前体形成（58），通过掺杂所述衬底（12）的接近硅表面的发射极结（16） 衬底（12）。 所述方法（50）还包括当所述室保持在高或升高温度时，在所述渐变密度硅抗反射表面（14）上形成（62）钝化层（19）。

公开(公告)号：US09911873B2

公开(公告)日：2018-03-06

申请号：US15234586

申请日：2016-08-11

申请人： Alliance for Sustainable Energy, LLC

发明人： William Nemeth ,  Hao-Chih Yuan ,  Vincenzo LaSalvia ,  Pauls Stradins ,  Matthew R. Page

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

公开(公告)号：US20140127850A1

公开(公告)日：2014-05-08

申请号：US14150221

申请日：2014-01-08

申请人： Alliance for Sustainable Energy, LLC

发明人： Hao-Chih Yuan ,  Howard M. Branz ,  Matthew R. Page

IPC分类号： H01L31/0232

CPC分类号： H01L31/02327 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/44 ,  Y02E10/547 ,  Y02P70/521

摘要： A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

摘要翻译： 提供了一种用于处理渐变密度的AR硅表面（14）以提供有效的表面钝化的方法（50）。 方法（50）包括将具有硅表面（14）的衬底或晶片（12）定位在反应或处理室（42）中。 硅表面（14）已被处理（52）为具有密度梯度或黑色硅区域的AR表面。 方法（50）继续将腔室（42）加热（54）至用于掺杂和表面钝化的高温。 所述方法（50）包括通过与衬底（12）的硅表面（14）接触的含掺杂剂的前体形成（58），通过掺杂所述硅表面（14）的发射极结（16） 衬底（12）。 所述方法（50）还包括当所述室保持在高或升高温度时，在所述渐变密度硅抗反射表面（14）上形成（62）钝化层（19）。