公开(公告)号：US20180374984A1

公开(公告)日：2018-12-27

申请号：US16014695

申请日：2018-06-21

申请人： Alliance for Sustainable Energy, LLC

发明人： William Michael Nemeth ,  Pauls Stradins ,  Vincenzo Anthony LaSalvia ,  Matthew Robert Page ,  David Levi Young

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/077

CPC分类号： H01L31/182 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1872

摘要： Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

公开(公告)号：US10714652B2

公开(公告)日：2020-07-14

申请号：US16014695

申请日：2018-06-21

申请人： Alliance for Sustainable Energy, LLC

发明人： William Michael Nemeth ,  Pauls Stradins ,  Vincenzo Anthony LaSalvia ,  Matthew Robert Page ,  David Levi Young

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/077 ,  H01L31/068 ,  H01L31/0745

摘要： Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.