-
公开(公告)号：US11075170B2
公开(公告)日：2021-07-27
申请号：US16777519
申请日：2020-01-30
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L23/31 , H01L21/48 , H01L23/00 , H01L23/498 , H01L21/56 , H01L23/538 , H01L25/065
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
-
公开(公告)号：US20240274547A1
公开(公告)日：2024-08-15
申请号：US18642214
申请日：2024-04-22
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/065
CPC分类号： H01L23/552 , H01L21/4853 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/5383 , H01L24/16 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2924/15192 , H01L2924/15311 , H01L2924/3025
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
-
公开(公告)号：US11967567B2
公开(公告)日：2024-04-23
申请号：US18138325
申请日：2023-04-24
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/065
CPC分类号： H01L23/552 , H01L21/4853 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/5383 , H01L24/16 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2924/15192 , H01L2924/15311 , H01L2924/3025
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
-
公开(公告)号：US20240047852A1
公开(公告)日：2024-02-08
申请号：US18239324
申请日：2023-08-29
发明人： Kyoung Yeon Lee , Tae Yong Lee , Doo Soub Shin , Seon A Lee , Woo Bin Jung , Ji Yeon Ryu , Jin Young Khim
IPC分类号： H01Q1/22 , H01L23/00 , H01L23/66 , H01L23/31 , H01L23/552 , H01L25/16 , H01L21/683 , H01L21/56 , H01L23/498 , H01L21/48 , H01Q1/50 , H01Q21/24
CPC分类号： H01Q1/2283 , H01L24/08 , H01L23/66 , H01L23/3128 , H01L23/552 , H01L25/16 , H01L24/81 , H01L21/6835 , H01L21/568 , H01L24/16 , H01L23/49838 , H01L21/565 , H01L21/4853 , H01L21/4857 , H01L23/49822 , H01Q1/50 , H01Q21/24 , H01L23/49816 , H01L2224/80006 , H01L2223/6677 , H01L2224/08237 , H01L2224/16227 , H01L2924/19102 , H01L2924/3025 , H01L2221/68359
摘要： A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.
-
公开(公告)号：US20230411303A1
公开(公告)日：2023-12-21
申请号：US18138325
申请日：2023-04-24
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L23/31 , H01L21/48 , H01L21/56
CPC分类号： H01L23/552 , H01L23/3128 , H01L25/0652 , H01L21/565 , H01L2225/0651 , H01L21/4853
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
-
公开(公告)号：US11637073B2
公开(公告)日：2023-04-25
申请号：US17384942
申请日：2021-07-26
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L23/31 , H01L21/48 , H01L21/56 , H01L25/065 , H01L23/00 , H01L23/498 , H01L23/538
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
-
公开(公告)号：US11742565B2
公开(公告)日：2023-08-29
申请号：US17405951
申请日：2021-08-18
发明人： Kyoung Yeon Lee , Tae Yong Lee , Doo Soub Shin , Seon A Lee , Woo Bin Jung , Ji Yeon Ryu , Jin Young Khim
IPC分类号： H01Q1/22 , H01L23/00 , H01L23/66 , H01L23/31 , H01L23/552 , H01L25/16 , H01L21/683 , H01L21/56 , H01L23/498 , H01L21/48 , H01Q1/50 , H01Q21/24
CPC分类号： H01Q1/2283 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/552 , H01L23/66 , H01L24/08 , H01L24/16 , H01L24/81 , H01L25/16 , H01Q1/50 , H01Q21/24 , H01L2221/68359 , H01L2223/6677 , H01L2224/08237 , H01L2224/16227 , H01L2224/80006 , H01L2924/19102 , H01L2924/3025
摘要： A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.
-
公开(公告)号：US20210376451A1
公开(公告)日：2021-12-02
申请号：US17405951
申请日：2021-08-18
发明人： Kyoung Yeon Lee , Tae Yong Lee , Doo Soub Shin , Seon A Lee , Woo Bin Jung , Ji Yeon Ryu , Jin Young Khim
IPC分类号： H01Q1/22 , H01L23/00 , H01L23/66 , H01L23/31 , H01L23/552 , H01L25/16 , H01L21/683 , H01L21/56 , H01L23/498 , H01L21/48 , H01Q1/50 , H01Q21/24
摘要： A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.
-
公开(公告)号：US20210351137A1
公开(公告)日：2021-11-11
申请号：US17384942
申请日：2021-07-26
发明人： Doo Soub Shin , Tae Yong Lee , Kyoung Yeon Lee , Sung Gyu Kim
IPC分类号： H01L23/552 , H01L23/31 , H01L21/48 , H01L21/56
摘要： A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
-
公开(公告)号：US11101540B2
公开(公告)日：2021-08-24
申请号：US16590801
申请日：2019-10-02
发明人： Kyoung Yeon Lee , Tae Yong Lee , Doo Soub Shin , Seon A Lee , Woo Bin Jung , Ji Yeon Ryu , Jin Young Khim
IPC分类号： H01Q1/38 , H01Q1/22 , H01L23/00 , H01L23/66 , H01L23/31 , H01L23/552 , H01L25/16 , H01L21/683 , H01L21/56 , H01L23/498 , H01L21/48 , H01Q1/50 , H01Q21/24
摘要： A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.019 秒)
