公开(公告)号：US20060019466A1

公开(公告)日：2006-01-26

申请号：US11188140

申请日：2005-07-22

申请人： Ammar Nayfeh ,  Chi On Chui ,  Krishna Saraswat ,  Takao Yonehara

发明人： Ammar Nayfeh ,  Chi On Chui ,  Krishna Saraswat ,  Takao Yonehara

IPC分类号： H01L21/30

CPC分类号： H01L29/518 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/94

摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

公开(公告)号：US20050072679A1

公开(公告)日：2005-04-07

申请号：US10849536

申请日：2004-05-19

申请人： Munir Nayfeh ,  Laila Abuhassan ,  Ammar Nayfeh ,  Yia-Chung Chang

发明人： Munir Nayfeh ,  Laila Abuhassan ,  Ammar Nayfeh ,  Yia-Chung Chang

IPC分类号： C01B33/02 ,  C25C1/22 ,  C25C5/02 ,  C25D1/00 ,  G02B6/02 ,  G02B6/10 ,  H01S3/16 ,  H01S5/04 ,  H01S5/10 ,  H01S5/30

CPC分类号： C25C5/02 ,  B82Y30/00 ,  C01B33/02 ,  C22B41/00 ,  C25C1/22 ,  H01S3/163 ,  H01S5/041 ,  H01S5/10 ,  H01S5/30 ,  H01S5/3031

摘要： In the invention, an electrochemical etching of crystalline germanium or a germanium alloy produces well-segregated chromatic clusters of nanoparticles. Distinct strong bands appear in the photoluminescence spectra under 350 nm excitation with the lowest peaks in wavelength identified to be at 430, 480, and 580 and 680-1100 nm. The material may be dispersed into a discrete set of luminescent nanoparticles of 1-3 nm in diameter, which may be prepared into colloids and reconstituted into films, crystals, etc.

摘要翻译： 在本发明中，结晶锗或锗合金的电化学蚀刻产生良好分离的纳米颗粒的色团。 在350nm激发下在光致发光光谱中出现不同的强条带，其中鉴定为在430,480和580和680-1100nm的波长中的最低峰。 该材料可以分散在直径为1-3nm的离散发光纳米颗粒组中，其可以制备成胶体并重构成膜，晶体等。