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    ORGANIC ELECTROLUMINESCENCE DEVICE
    9.
    发明申请
    ORGANIC ELECTROLUMINESCENCE DEVICE 审中-公开
    有机电致发光器件

    公开(公告)号：US20100109519A1

    公开(公告)日：2010-05-06

    申请号：US12652752

    申请日：2010-01-06

    申请人： An-Chi Wei ,  Bo-Ru Yang ,  Han-Ping Shieh

    发明人： An-Chi Wei ,  Bo-Ru Yang ,  Han-Ping Shieh

    IPC分类号： H01J1/62

    CPC分类号： H01L51/5262 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/5253 ,  Y02E10/549 ,  Y02P70/521

    摘要： An organic electroluminescence (OEL) device, having a polymeric substrate, a plurality of light enhanced structures, a barrier layer, a first electrode, an organic light emitting layer, a second electrode and a protective layer, is provided. The polymeric substrate has a first surface and a second surface. The light enhanced structures are disposed on the first surface. The barrier layer is disposed on the second surface. The first electrode is disposed on the barrier layer. The organic light emitting layer is disposed on the first electrode. The second electrode is disposed on the organic light emitting layer. The protective layer is disposed on the second electrode. Since the OEL device has light enhanced structures, not only light efficiency can be improved but surface scattering is also reduced.

    摘要翻译： 提供了具有聚合物基底，多个光增强结构，阻挡层，第一电极，有机发光层，第二电极和保护层的有机电致发光（OEL）器件。 聚合物基材具有第一表面和第二表面。 光增强结构设置在第一表面上。 阻挡层设置在第二表面上。 第一电极设置在阻挡层上。 有机发光层设置在第一电极上。 第二电极设置在有机发光层上。 保护层设置在第二电极上。 由于OEL装置具有光增强结构，所以不仅可以提高光效，而且降低表面散射。

    [METHOD OF REDUCING PATTERN PITCH IN INTEGRATED CIRCUITS]
    10.
    发明申请
    [METHOD OF REDUCING PATTERN PITCH IN INTEGRATED CIRCUITS] 有权
    [集成电路中减少图案的方法]

    公开(公告)号：US20060011575A1

    公开(公告)日：2006-01-19

    申请号：US10710488

    申请日：2004-07-14

    申请人： Henry Chung ,  Ming-Chung Liang ,  An-Chi Wei ,  Shin-Yi Tsai ,  Kuo-Liang Wei

    发明人： Henry Chung ,  Ming-Chung Liang ,  An-Chi Wei ,  Shin-Yi Tsai ,  Kuo-Liang Wei

    IPC分类号： B44C1/22 ,  H01L21/302

    CPC分类号： H01L21/31116 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/947

    摘要： A method of reducing pattern pitch is provided. A material layer, a hard mask layer and a patterned photoresist layer are sequentially formed over a substrate. Using the patterned photoresist layer as etching mask, the hard mask layer is etched. Due to the trenching effect, a residual hard mask layer remains in an exposed region exposed by the photoresist layer and micro-trenches are formed at the edges of the residual hard mask layer. Thereafter, using the residual hard mask layer as etching mask to pattern the material layer. Finally, the patterned photoresist layer and the hard mask layer are removed. In the invention, the trenching effect is utilized when etching the hard mask layer. A portion of the hard mask layer remains, and the micro-trenches are formed in the hard mask layer. After the micro-trenches are transferred to the material layer, the pattern pitch can be reduced.

    摘要翻译： 提供了一种降低图形间距的方法。 在衬底上顺序地形成材料层，硬掩模层和图案化的光致抗蚀剂层。 使用图案化的光致抗蚀剂层作为蚀刻掩模，蚀刻硬掩模层。 由于挖沟效应，残留的硬掩模层保留在由光致抗蚀剂层暴露的暴露区域中，并且在残留硬掩模层的边缘处形成微沟槽。 此后，使用残留的硬掩模层作为蚀刻掩模来图案化材料层。 最后，去除图案化的光致抗蚀剂层和硬掩模层。 在本发明中，当蚀刻硬掩模层时，利用挖沟效应。 硬掩模层的一部分残留，并且微沟槽形成在硬掩模层中。 在将微沟槽转移到材料层之后，可以减小图案间距。