公开(公告)号：US20130221405A1

公开(公告)日：2013-08-29

申请号：US13852883

申请日：2013-03-28

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  David Casey ,  Graham McCorkell

IPC: H01L27/06

CPC classification number: H01L27/06 ,  H01L23/60 ,  H01L27/0251 ,  H01L2924/0002 ,  H02H9/046 ,  H01L2924/00

Abstract: Apparatus and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type.

Abstract translation: 公开了用于电子电路保护的装置和方法。 在一个实施例中，装置包括具有发射极和集电极区的阱。 阱具有第一类型的掺杂，并且发射极和集电极区域具有第二类型的掺杂。 发射极区域，阱极和集电极区域分别被配置为用作第一晶体管的发射极，基极和集电极。 集电极区域与发射极区域间隔开以限定间隔。 第一间隔件和第二间隔件位于发射器和收集器之间的阱附近。 导电板定位成邻近阱并且位于第一间隔件和第二间隔件之间，并且与第一间隔件相邻的掺杂，第二间隔件和板基本上由第一类型组成。

公开(公告)号：US08928085B2

公开(公告)日：2015-01-06

申请号：US13852883

申请日：2013-03-28

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  David Casey ,  Graham McCorkell

IPC: H01L23/60 ,  H02H9/00 ,  H02H3/24 ,  H01L27/06 ,  H01L27/02 ,  H02H9/04

CPC classification number: H01L27/06 ,  H01L23/60 ,  H01L27/0251 ,  H01L2924/0002 ,  H02H9/046 ,  H01L2924/00

Abstract: Apparatus and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type.

Abstract translation: 公开了用于电子电路保护的装置和方法。 在一个实施例中，装置包括具有发射极和集电极区的阱。 阱具有第一类型的掺杂，并且发射极和集电极区域具有第二类型的掺杂。 发射极区域，阱极和集电极区域分别被配置为用作第一晶体管的发射极，基极和集电极。 集电极区域与发射极区域间隔开以限定间隔。 第一间隔件和第二间隔件位于发射器和收集器之间的阱附近。 导电板定位成邻近阱并且位于第一间隔件和第二间隔件之间，并且与第一间隔件相邻的掺杂，第二间隔件和板基本上由第一类型组成。