公开(公告)号：US20210118871A1

公开(公告)日：2021-04-22

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter A. Stubler

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/45 ,  H01L23/66 ,  H01L29/205 ,  H01L23/48 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.