公开(公告)号：US09184098B2

公开(公告)日：2015-11-10

申请号：US13625577

申请日：2012-09-24

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy ,  Shuyun Zhang

IPC: H01L29/778 ,  H01L21/8252 ,  H01L27/02 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L21/8252 ,  H01L27/0248 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

Abstract: A protection circuit including a multi-gate high electron mobility transistor (HEMT), a forward conduction control block, and a reverse conduction control block is provided between a first terminal and a second terminal. The multi-gate HEMT includes an explicit drain/source, a first depletion-mode (D-mode) gate, a first enhancement-mode (E-mode) gate, a second E-mode gate, a second D-mode gate, and an explicit source/drain. The drain/source and the first D-mode gate are connected to the first terminal and the source/drain and the second D-mode gate are connected to the second terminal. The forward conduction control block turns on the second E-mode gate when a voltage difference between the first and second terminals is greater than a forward conduction trigger voltage, and the reverse conduction control block turns on the first E-mode gate when the voltage difference is more negative than a reverse conduction trigger voltage.

Abstract translation: 在第一端子和第二端子之间设置包括多栅极高电子迁移率晶体管（HEMT），正向传导控制块和反向导通控制块的保护电路。 多栅极HEMT包括显式漏极/源极，第一耗尽模式（D模式）栅极，第一增强模式（E模式）栅极，第二E模式栅极，第二D模式栅极， 和明确的源/漏。 漏极/源极和第一D型栅极连接到第一端子，源极/漏极和第二D型栅极连接到第二端子。 当第一和第二端子之间的电压差大于正向传导触发电压时，正向传导控制块导通第二E模式栅极，当反向导通控制模块的电压差 比反向传导触发电压更负。

公开(公告)号：US08723227B2

公开(公告)日：2014-05-13

申请号：US13625611

申请日：2012-09-24

Applicant: Analog Devices, Inc.

Inventor： Srivatsan Parthasarathy ,  Javier Alejandro Salcedo ,  Shuyun Zhang

IPC: H01L29/66 ,  H01L21/336

CPC classification number: H01L21/8252 ,  H01L27/0248 ,  H01L27/0605 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7783

Abstract: A protection clamp is provided between a first terminal and a second terminal, and includes a multi-gate high electron mobility transistor (HEMT), a current limiting circuit, and a forward trigger control circuit. The multi-gate HEMT includes a drain/source, a source/drain, a first depletion-mode (D-mode) gate, a second D-mode gate, and an enhancement-mode (E-mode) gate disposed between the first and second D-mode gates. The drain/source and the first D-mode gate are connected to the first terminal and the source/drain and the second D-mode gate are connected to the second terminal. The forward trigger control and the current limiting circuits are coupled between the E-mode gate and the first and second terminals, respectively. The forward trigger control circuit provides an activation voltage to the E-mode gate when a voltage of the first terminal exceeds a voltage of the second terminal by a forward trigger voltage.

Abstract translation: 在第一端子和第二端子之间提供保护夹，并且包括多门高电子迁移率晶体管（HEMT），限流电路和正向触发控制电路。 多栅极HEMT包括漏极/源极，源极/漏极，第一耗尽模式（D模式）栅极，第二D模式栅极和设置在第一和第二栅极之间的增强模式（E模式）栅极 和第二D模式门。 漏极/源极和第一D型栅极连接到第一端子，源极/漏极和第二D型栅极连接到第二端子。 正向触发控制和限流电路分别耦合在E模式门和第一和第二端子之间。 当第一端子的电压通过正向触发电压超过第二端子的电压时，正向触发控制电路向E模式栅极提供激活电压。

公开(公告)号：US20140084347A1

公开(公告)日：2014-03-27

申请号：US13625577

申请日：2012-09-24

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy ,  Shuyun Zhang

IPC: H01L27/088 ,  H01L29/778 ,  H01L21/335

CPC classification number: H01L21/8252 ,  H01L27/0248 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

Abstract: A protection circuit including a multi-gate high electron mobility transistor (HEMT), a forward conduction control block, and a reverse conduction control block is provided between a first terminal and a second terminal. The multi-gate HEMT includes an explicit drain/source, a first depletion-mode (D-mode) gate, a first enhancement-mode (E-mode) gate, a second E-mode gate, a second D-mode gate, and an explicit source/drain. The drain/source and the first D-mode gate are connected to the first terminal and the source/drain and the second D-mode gate are connected to the second terminal. The forward conduction control block turns on the second E-mode gate when a voltage difference between the first and second terminals is greater than a forward conduction trigger voltage, and the reverse conduction control block turns on the first E-mode gate when the voltage difference is more negative than a reverse conduction trigger voltage.

Abstract translation: 在第一端子和第二端子之间设置包括多栅极高电子迁移率晶体管（HEMT），正向传导控制块和反向导通控制块的保护电路。 多栅极HEMT包括显式漏极/源极，第一耗尽模式（D模式）栅极，第一增强模式（E模式）栅极，第二E模式栅极，第二D模式栅极， 和明确的源/漏。 漏极/源极和第一D型栅极连接到第一端子，源极/漏极和第二D型栅极连接到第二端子。 当第一和第二端子之间的电压差大于正向传导触发电压时，正向传导控制块导通第二E模式栅极，当反向导通控制模块的电压差 比反向传导触发电压更负。

公开(公告)号：US08878344B2

公开(公告)日：2014-11-04

申请号：US13655026

申请日：2012-10-18

Applicant: Analog Devices, Inc.

Inventor： Srivatsan Parthasarathy ,  Javier Alejandro Salcedo ,  Shuyun Zhang

IPC: H01L29/66

CPC classification number: H01L29/735 ,  H01L29/20 ,  H01L29/6631

Abstract: Compound semiconductor lateral PNP bipolar transistors are fabricated based on processes traditionally used for formation of compound semiconductor NPN heterojunction bipolar transistors and hence such PNP bipolar transistors can be fabricated inexpensively using existing fabrication technologies. In particular, GaAs-based lateral PNP bipolar transistors are fabricated using GaAs-based NPN heterojunction bipolar transistor fabrication processes.

Abstract translation: 基于传统上用于形成化合物半导体NPN异质结双极晶体管的工艺制造复合半导体横向PNP双极晶体管，因此可以使用现有的制造技术廉价地制造这种PNP双极晶体管。 特别地，基于GaAs的NPN异质结双极晶体管制造工艺制造了基于GaAs的横向PNP双极晶体管。

公开(公告)号：US20140084331A1

公开(公告)日：2014-03-27

申请号：US13625611

申请日：2012-09-24

Applicant: ANALOG DEVICES, INC.

Inventor： Srivatsan Parthasarathy ,  Javier Alejandro Salcedo ,  Shuyun Zhang

IPC: H01L29/747 ,  H01L21/332

CPC classification number: H01L21/8252 ,  H01L27/0248 ,  H01L27/0605 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7783

Abstract: A protection clamp is provided between a first terminal and a second terminal, and includes a multi-gate high electron mobility transistor (HEMT), a current limiting circuit, and a forward trigger control circuit. The multi-gate HEMT includes a drain/source, a source/drain, a first depletion-mode (D-mode) gate, a second D-mode gate, and an enhancement-mode (E-mode) gate disposed between the first and second D-mode gates. The drain/source and the first D-mode gate are connected to the first terminal and the source/drain and the second D-mode gate are connected to the second terminal. The forward trigger control and the current limiting circuits are coupled between the E-mode gate and the first and second terminals, respectively. The forward trigger control circuit provides an activation voltage to the E-mode gate when a voltage of the first terminal exceeds a voltage of the second terminal by a forward trigger voltage.

Abstract translation: 在第一端子和第二端子之间提供保护夹，并且包括多门高电子迁移率晶体管（HEMT），限流电路和正向触发控制电路。 多栅极HEMT包括漏极/源极，源极/漏极，第一耗尽模式（D模式）栅极，第二D模式栅极和设置在第一和第二栅极之间的增强模式（E模式）栅极 和第二D模式门。 漏极/源极和第一D型栅极连接到第一端子，源极/漏极和第二D型栅极连接到第二端子。 正向触发控制和限流电路分别耦合在E模式门和第一和第二端子之间。 当第一端子的电压通过正向触发电压超过第二端子的电压时，正向触发控制电路向E模式栅极提供激活电压。