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公开(公告)号:US20220373592A1
公开(公告)日:2022-11-24
申请号:US17746498
申请日:2022-05-17
发明人: Padraig Fitzgerald , Erkan Acar , Patrick M. McGuinness , Randy Oltman , Naveen Dhull , Derek W. Nolan , Eric James Carty
摘要: An apparatus is provided that is implemented to enable multiple tests of different types, such as a direct current (DC) test and/or a radio frequency (RF) test of a semiconductor device. The apparatus includes a microelectromechanical systems (MEMS) switch block coupled between the semiconductor device and automatic testing equipment (ATE). The apparatus is configured to enable/disable a DC path or an RF path to switch between a DC test and an RF test without reconfiguring the connections between the semiconductor device and the ATE. The DC path is used to perform a DC contact test for one or more pins of the semiconductor device. The RF path is used to perform an RF test for the semiconductor device.
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公开(公告)号:US20210167169A1
公开(公告)日:2021-06-03
申请号:US16700370
申请日:2019-12-02
IPC分类号: H01L29/06 , H01L23/495
摘要: Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single monolithic substrate are connect in series to achieve a higher amount of electrical isolation for a single substrate than for one of the isolators alone. A pair of isolators in the back-to-back configuration have top and bottom isolator components where the top isolator components are connected together and electrically isolated from the underlying substrate, resulting in floating top isolator components. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.
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公开(公告)号:US20230083839A1
公开(公告)日:2023-03-16
申请号:US17945028
申请日:2022-09-14
发明人: Sombel Diaham , Paul Lambkin , Bernard Patrick Stenson , Patrick M. McGuinness , Laurence B. O'Sullivan , Stephen O'Brien
IPC分类号: H01G2/22 , H01B3/00 , H01B5/16 , H01G4/40 , H01L23/528 , H01L23/522 , H01L23/532 , H01F27/32
摘要: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.
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公开(公告)号:US11372030B2
公开(公告)日:2022-06-28
申请号:US16893874
申请日:2020-06-05
IPC分类号: G01R19/165 , H01L23/60 , G01R31/00 , H01L27/02 , G01R31/28 , G01N25/04 , H01L23/525 , H01L23/62 , H01L25/065
摘要: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.
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公开(公告)号:US20210375542A1
公开(公告)日:2021-12-02
申请号:US16887719
申请日:2020-05-29
发明人: Sombel Diaham , Paul Lambkin , Bernard Patrick Stenson , Patrick M. McGuinness , Laurence B. O'Sullivan , Stephen O'Brien
摘要: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.
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公开(公告)号:US12099085B2
公开(公告)日:2024-09-24
申请号:US17746498
申请日:2022-05-17
发明人: Padraig Fitzgerald , Erkan Acar , Patrick M. McGuinness , Randy Oltman , Naveen Dhull , Derek W. Nolan , Eric James Carty
CPC分类号: G01R31/2834 , H01H1/0036
摘要: An apparatus is provided that is implemented to enable multiple tests of different types, such as a direct current (DC) test and/or a radio frequency (RF) test of a semiconductor device. The apparatus includes a microelectromechanical systems (MEMS) switch block coupled between the semiconductor device and automatic testing equipment (ATE). The apparatus is configured to enable/disable a DC path or an RF path to switch between a DC test and an RF test without reconfiguring the connections between the semiconductor device and the ATE. The DC path is used to perform a DC contact test for one or more pins of the semiconductor device. The RF path is used to perform an RF test for the semiconductor device.
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公开(公告)号:US11728090B2
公开(公告)日:2023-08-15
申请号:US16786928
申请日:2020-02-10
发明人: Patrick M. McGuinness , Paul Lambkin , Laurence B. O'Sullivan , Bernard Patrick Stenson , Steven Tanghe , Baoxing Chen
CPC分类号: H01F27/36 , H01F27/2804 , H01F27/323 , H01G4/012 , H01G4/30 , H01F2027/2809
摘要: Micro-scale devices, such as transformers and capacitors, having a floating conductive layer are disclosed. A floating conductive layer may be disposed in an insulator layer and can reduce a maximum electric field between a first planar conductor and a second planar conductor of a micro-scale passive device. Reduction of a maximum electric field between a first planar conductor and a second planar conductor can reduce undesirable effects on electrical components.
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公开(公告)号:US11476045B2
公开(公告)日:2022-10-18
申请号:US16887719
申请日:2020-05-29
发明人: Sombel Diaham , Paul Lambkin , Bernard Patrick Stenson , Patrick M. McGuinness , Laurence B. O'Sullivan , Stephen O'Brien
IPC分类号: H01G2/22 , H01B3/00 , H01B5/16 , H01G4/40 , H01L23/528 , H01L23/522 , H01L23/532 , H01F27/32 , H01F27/34 , H01F19/08 , H01F27/28
摘要: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.
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公开(公告)号:US20240087829A1
公开(公告)日:2024-03-14
申请号:US18512949
申请日:2023-11-17
发明人: Padraig Fitzgerald , David Aheme , Patrick M. McGuinness , Naveen Dhull , Michael James Twohig , Philip James Brennan , Donal P. McAuliffe
CPC分类号: H01H59/0009 , B81B7/02 , B81B2207/03 , B81B2207/053
摘要: Impedance paths for integrated circuits having microelectromechanical systems (MEMS) switches that allow for electrical charge to bleed from circuit nodes to fixed electric potentials (e.g., ground) are described. Such paths are referred to herein as charge bleed circuits. The circuit nodes may be circuit locations where electrical charge may accumulate because there is no other path for the electrical charge to dissipate. In some embodiments, a charge bleed circuit includes a switchable device (e.g., a MEMS switch, a solid-state device switch, or a circuit including various solid-state device switches that, collectively, implement a device that can be switched on and off) that connects and disconnects the impedance path from a circuit node. This may allow the device to perform different types of measurements at desired performance levels.
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公开(公告)号:US11798741B2
公开(公告)日:2023-10-24
申请号:US17945028
申请日:2022-09-14
发明人: Sombel Diaham , Paul Lambkin , Bernard Patrick Stenson , Patrick M. McGuinness , Laurence B. O'Sullivan , Stephen O'Brien
IPC分类号: H01G2/22 , H01B3/00 , H01B5/16 , H01G4/40 , H01L23/528 , H01L23/522 , H01L23/532 , H01F27/32 , H01F27/34 , H01F19/08 , H01F27/28
CPC分类号: H01G2/22 , H01B3/004 , H01B5/16 , H01F27/324 , H01G4/40 , H01L23/528 , H01L23/5223 , H01L23/5225 , H01L23/5227 , H01L23/5329 , H01F27/2804 , H01F27/345 , H01F2019/085 , H01F2027/2809
摘要: Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.
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